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SKIM406GD066HD

Description
Trench IGBT Modules
CategoryDiscrete semiconductor    The transistor   
File Size201KB,5 Pages
ManufacturerSEMIKRON
Websitehttp://www.semikron.com
Environmental Compliance
Download Datasheet Parametric View All

SKIM406GD066HD Overview

Trench IGBT Modules

SKIM406GD066HD Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerSEMIKRON
package instructionFLANGE MOUNT, R-XUFM-X33
Contacts33
Reach Compliance Codecompli
ECCN codeEAR99
Other featuresHIGH RELIABILITY
Shell connectionISOLATED
Maximum collector current (IC)387 A
Collector-emitter maximum voltage600 V
Configuration3 BANKS, SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR
Gate-emitter maximum voltage20 V
JESD-30 codeR-XUFM-X33
Number of components6
Number of terminals33
Maximum operating temperature175 °C
Package body materialUNSPECIFIED
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Certification statusNot Qualified
surface mountNO
Terminal formUNSPECIFIED
Terminal locationUPPER
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsPOWER CONTROL
Transistor component materialsSILICON
Nominal off time (toff)1000 ns
Nominal on time (ton)260 ns
VCEsat-Max1.85 V
SKiM406GD066HD
Absolute Maximum Ratings
Symbol
IGBT
V
CES
I
C
I
Cnom
I
CRM
I
CRM
= 2xI
Cnom
V
CC
= 360 V
V
GE
15 V
V
CES
600 V
V
GES
t
psc
T
j
Inverse diode
I
F
T
s
= 25 °C
T
s
= 70 °C
T
j
= 150 °C
T
j
= 175 °C
T
s
= 25 °C
T
s
= 70 °C
600
383
304
400
800
-20 ... 20
6
-40 ... 175
320
249
300
I
FRM
= 2xI
Fnom
t
p
= 10 ms, sin 180°, T
j
= 25 °C
600
2340
-40 ... 175
700
-40 ... 125
AC sinus 50 Hz, t = 1 min
2500
V
A
A
A
A
V
µs
°C
A
A
A
A
A
°C
A
°C
V
Conditions
Values
Unit
SKiM 63
Trench IGBT Modules
SKiM406GD066HD
®
T
j
= 175 °C
I
Fnom
Features
• IGBT 3 Trench Gate Technology
• Solderless sinter technology
• V
CE(sat)
with positive temperature
coefficient
• Low inductance case
• Isolated by Al
2
O
3
DCB (Direct Copper
Bonded) ceramic substrate
• Pressure contact technology for
thermal contacts and electrical
contacts
• High short circuit capability, self
limiting to 6 x I
C
• Integrated temperature sensor
I
FRM
I
FSM
T
j
Module
I
t(RMS)
T
stg
V
isol
Characteristics
Symbol
IGBT
V
CE(sat)
V
CE0
r
CE
V
GE(th)
I
CES
C
ies
C
oes
C
res
Q
G
R
Gint
t
d(on)
t
r
E
on
t
d(off)
t
f
E
off
R
th(j-s)
I
C
= 400 A
V
GE
= 15 V
chiplevel
T
j
= 25 °C
T
j
= 150 °C
T
j
= 25 °C
T
j
= 150 °C
V
GE
= 15 V
T
j
= 25 °C
T
j
= 150 °C
5
T
j
= 25 °C
T
j
= 150 °C
f = 1 MHz
f = 1 MHz
f = 1 MHz
24.64
1.54
0.73
3200
0.5
T
j
= 150 °C
T
j
= 150 °C
T
j
= 150 °C
T
j
= 150 °C
T
j
= 150 °C
T
j
= 150 °C
180
80
8
950
50
25
0.186
1.45
1.70
0.9
0.85
1.4
2.1
5.8
0.1
1.85
2.10
1
0.9
2.1
3.0
6.5
0.3
V
V
V
V
mΩ
mΩ
V
mA
mA
nF
nF
nF
nC
ns
ns
mJ
ns
ns
mJ
K/W
Conditions
min.
typ.
max.
Unit
Typical Applications
• Automotive inverter
• High reliability AC inverter wind
• High reliability AC inverter drives
V
GE
=V
CE
, I
C
= 6.4 mA
V
GE
= 0 V
V
CE
= 600 V
V
CE
= 25 V
V
GE
= 0 V
V
GE
= - 8 V...+ 15 V
T
j
= 25 °C
V
CC
= 300 V
I
C
= 400 A
R
G on
= 3
R
G off
= 5
di/dt
on
= 5900 A/µs
di/dt
off
= 6000 A/µs
per IGBT
GD
© by SEMIKRON
Rev. 3 – 14.12.2009
1
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