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SKM100GD063DL

Description
Superfast NPT-IGBT Module
CategoryDiscrete semiconductor    The transistor   
File Size789KB,5 Pages
ManufacturerSEMIKRON
Websitehttp://www.semikron.com
Environmental Compliance
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SKM100GD063DL Overview

Superfast NPT-IGBT Module

SKM100GD063DL Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerSEMIKRON
Parts packaging codeDO-204
package instructionFLANGE MOUNT, R-XUFM-X17
Contacts2
Manufacturer packaging codeCASE D68
Reach Compliance Codecompli
Other featuresUL RECOGNIZED
Shell connectionISOLATED
Maximum collector current (IC)130 A
Collector-emitter maximum voltage600 V
ConfigurationBRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE
Gate-emitter maximum voltage20 V
JESD-30 codeR-XUFM-X17
JESD-609 codee2
Number of components6
Number of terminals17
Maximum operating temperature150 °C
Package body materialUNSPECIFIED
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)450 W
Certification statusNot Qualified
GuidelineIEC-60747-1
surface mountNO
Terminal surfaceTin/Silver (Sn/Ag)
Terminal formUNSPECIFIED
Terminal locationUPPER
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsPOWER CONTROL
Transistor component materialsSILICON
Nominal off time (toff)335 ns
Nominal on time (ton)90 ns
VCEsat-Max2.5 V
SKM 100GD063DL
Absolute Maximum Ratings
Symbol Conditions
IGBT
Values
Units
SEMITRANS
®
6
Superfast NPT-IGBT
Module
SKM 100GD063DL
Inverse Diode
Module
Features
Characteristics
Symbol Conditions
IGBT
min.
typ.
max.
Units
Typical Applications
GD
1
24-08-2009 DIL
© by SEMIKRON

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