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SKM111AR_08

Description
200 A, 100 V, 0.0085 ohm, N-CHANNEL, Si, POWER, MOSFET
Categorysemiconductor    Discrete semiconductor   
File Size501KB,4 Pages
ManufacturerSEMIKRON
Websitehttp://www.semikron.com
Download Datasheet Parametric Compare View All

SKM111AR_08 Overview

200 A, 100 V, 0.0085 ohm, N-CHANNEL, Si, POWER, MOSFET

SKM111AR_08 Parametric

Parameter NameAttribute value
Number of terminals4
Minimum breakdown voltage100 V
Processing package descriptionCASE D15, SEMITRANS-4
Lead-freeYes
EU RoHS regulationsYes
stateACTIVE
packaging shapeRectangle
Package SizeFlange mounting
Terminal formUNSPECIFIED
terminal coatingtin/silver
Terminal locationUPPER
Packaging MaterialsUNSPECIFIED
structureSingle WITH BUILT-IN diode
Shell connectionisolation
Number of components1
transistor applicationsswitch
Transistor component materialssilicon
Channel typeN channel
field effect transistor technologyMetal-OXIDE SEMICONDUCTOR
operating modeENHANCEMENT
Transistor typeuniversal power supply
Maximum leakage current200 A
Maximum drain on-resistance0.0085 ohm
Maximum leakage current pulse600 A
SKM 111AR
MOSFET,TRANSISTOR
Absolute Maximum Ratings
Symbol Conditions
Values
Units
Inverse diode
SEMITRANS
TM
M1
Power MOSFET Modules
SKM 111AR
Characteristics
Symbol Conditions
min.
typ.
max.
Units
Features
Inverse diode
Typical Applications
Thermal characteristics
Mechanical data
MA
1
03-12-2008 NOS
© by SEMIKRON

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SKM111AR_08 SKM111AR
Description 200 A, 100 V, 0.0085 ohm, N-CHANNEL, Si, POWER, MOSFET 200 A, 100 V, 0.0085 ohm, N-CHANNEL, Si, POWER, MOSFET
Number of terminals 4 4
Terminal form UNSPECIFIED UNSPECIFIED
Terminal location UPPER UPPER
Shell connection isolation ISOLATED
Number of components 1 1
transistor applications switch SWITCHING
Transistor component materials silicon SILICON
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