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SKM300GB125D

Description
Ultra Fast IGBT Module
CategoryDiscrete semiconductor    The transistor   
File Size680KB,6 Pages
ManufacturerSEMIKRON
Websitehttp://www.semikron.com
Environmental Compliance
Download Datasheet Parametric Compare View All

SKM300GB125D Overview

Ultra Fast IGBT Module

SKM300GB125D Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerSEMIKRON
Parts packaging codeDO-204
package instructionFLANGE MOUNT, R-XUFM-X7
Contacts2
Manufacturer packaging codeCASE D 56
Reach Compliance Codecompli
ECCN codeEAR99
Other featuresUL RECOGNIZED
Shell connectionISOLATED
Maximum collector current (IC)300 A
Collector-emitter maximum voltage1200 V
ConfigurationSERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE
Gate-emitter maximum voltage20 V
JESD-30 codeR-XUFM-X7
JESD-609 codee2
Number of components2
Number of terminals7
Maximum operating temperature150 °C
Package body materialUNSPECIFIED
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Certification statusNot Qualified
surface mountNO
Terminal surfaceTin/Silver (Sn/Ag)
Terminal formUNSPECIFIED
Terminal locationUPPER
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsPOWER CONTROL
Transistor component materialsSILICON
Nominal off time (toff)490 ns
Nominal on time (ton)170 ns
VCEsat-Max3.85 V
SKM 300GB125D
Absolute Maximum Ratings
Symbol Conditions
IGBT
Values
Units
SEMITRANS
®
3
Ultra Fast IGBT Module
SKM 300GB125D
Module
Inverse Diode
Features
Characteristics
Symbol Conditions
IGBT
min.
typ.
max.
Units
Typical Applications
GB
1
03-06-2009 NOS
© by SEMIKRON

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