SKM 400GB066D
Absolute Maximum Ratings
Symbol Conditions
IGBT
Values
Units
SEMITRANS
®
3
Trench IGBT Modules
SKM 400GB066D
Inverse Diode
Module
Features
Characteristics
Symbol Conditions
IGBT
min.
typ.
max.
Units
Typical Applications
Remarks
GB
1
06-10-2009 NOS
© by SEMIKRON
SKM 400GB066D
Characteristics
Symbol Conditions
Inverse Diode
min.
typ.
max.
Units
SEMITRANS
®
3
Trench IGBT Modules
SKM 400GB066D
Module
Features
This is an electrostatic discharge sensitive device (ESDS), international standard
IEC 60747-1, Chapter IX.
This technical information specifies semiconductor devices but promises no
characteristics. No warranty or guarantee expressed or implied is made regarding
delivery, performance or suitability.
Typical Applications
Remarks
GB
2
06-10-2009 NOS
© by SEMIKRON
SKM 400GB066D
Z
th
Symbol
Z
th(j-c)l
Conditions
Values
Units
SEMITRANS
®
3
Z
th(j-c)D
Trench IGBT Modules
SKM 400GB066D
Features
Typical Applications
Remarks
GB
3
06-10-2009 NOS
© by SEMIKRON
SKM 400GB066D
Fig. 1 Typ. output characteristic, inclusive R
CC'+ EE'
Fig. 2 Rated current vs. temperature I
C
= f (T
C
)
Fig. 3 Typ. turn-on /-off energy = f (I
C
)
Fig. 4 Typ. turn-on /-off energy = f (R
G
)
Fig. 5 Typ. transfer characteristic
Fig. 6 Typ. gate charge characteristic
4
06-10-2009 NOS
© by SEMIKRON
SKM 400GB066D
Fig. 7 Typ. switching times vs. I
C
Fig. 8 Typ. switching times vs. gate resistor R
G
Fig. 9 Transient thermal impedance of IGBT and Diode
Fig. 10 CAL diode forward characteristic
Fig. 11 Typ. CAL diode peak reverse recovery current
Fig. 12 Typ. CAL diode recovered charge
5
06-10-2009 NOS
© by SEMIKRON
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