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SKM50GB12V

Description
SKM50GB12V
File Size185KB,3 Pages
ManufacturerSEMIKRON
Websitehttp://www.semikron.com
Download Datasheet View All

SKM50GB12V Overview

SKM50GB12V

SKM50GB12V
Absolute Maximum Ratings
Symbol
IGBT
V
CES
I
C
I
Cnom
I
CRM
I
CRM
= 3xI
Cnom
V
CC
= 720 V
V
GE
15 V
V
CES
1200 V
V
GES
t
psc
T
j
Inverse diode
I
F
T
c
= 25 °C
T
c
= 80 °C
T
j
= 125 °C
T
j
= 175 °C
T
c
= 25 °C
T
c
= 80 °C
1200
79
60
50
150
-20 ... 20
10
-40 ... 175
65
49
50
I
FRM
= 3xI
Fnom
t
p
= 10 ms, sin 180°, T
j
= 25 °C
150
270
-40 ... 175
200
-40 ... 125
AC sinus 50Hz, t = 1 min
4000
V
A
A
A
A
V
µs
°C
A
A
A
A
A
°C
A
°C
V
Conditions
Values
Unit
SEMITRANS 2
®
SKM50GB12V
Target Data
Features
• V
CE(sat)
with positive temperature
coefficient
• High short circuit capability, self
limiting to 6 x Icnom
• Fast & soft inverse CAL diodes
• Large clearance (10 mm) and
creepage distances (20 mm)
• Isolated copper baseplate using DBC
Technology (Direct Copper Bonding)
• UL recognized, file no. E63532
I
Fnom
I
FRM
I
FSM
T
j
Module
I
t(RMS)
T
stg
V
isol
T
j
= 175 °C
Characteristics
Symbol
IGBT
V
CE(sat)
V
CE0
r
CE
V
GE(th)
I
CES
C
ies
C
oes
C
res
Q
G
R
Gint
t
d(on)
t
r
E
on
t
d(off)
t
f
E
off
R
th(j-c)
per IGBT
V
CC
= 600 V
I
C
= 50 A
V
GE
= ±15 V
R
G on
= 13
R
G off
= 13
T
j
= 150 °C
T
j
= 150 °C
T
j
= 150 °C
T
j
= 150 °C
T
j
= 150 °C
T
j
= 150 °C
4
0.53
5
I
C
= 50 A
V
GE
= 15 V
chiplevel
T
j
= 25 °C
T
j
= 150 °C
T
j
= 25 °C
T
j
= 150 °C
V
GE
= 15 V
V
GE
=V
CE
, I
C
= 2 mA
V
GE
= 0 V
V
CE
= 1200 V
V
CE
= 25 V
V
GE
= 0 V
T
j
= 25 °C
T
j
= 150 °C
f = 1 MHz
f = 1 MHz
f = 1 MHz
3
0.30
0.295
540
4.0
T
j
= 25 °C
T
j
= 150 °C
6
1.85
2.2
0.94
0.88
18.2
26.4
6.5
0.1
2.3
2.65
1.25
1.22
21.0
28.6
7
0.3
V
V
V
V
mΩ
mΩ
V
mA
mA
nF
nF
nF
nC
ns
ns
mJ
ns
ns
mJ
K/W
Conditions
min.
typ.
max.
Unit
Typical Applications*
• AC inverter drives
• UPS
• Electronic welders at fsw up to 20 kHz
GB
© by SEMIKRON
Rev. 0 – 23.12.2009
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