EEWORLDEEWORLDEEWORLD

Part Number

Search

K4F661612B-TL600

Description
Fast Page DRAM, 4MX16, 60ns, CMOS, PDSO50, 0.400 INCH, PLASTIC, TSOP2-50
Categorystorage    storage   
File Size844KB,35 Pages
ManufacturerSAMSUNG
Websitehttp://www.samsung.com/Products/Semiconductor/
Download Datasheet Parametric View All

K4F661612B-TL600 Overview

Fast Page DRAM, 4MX16, 60ns, CMOS, PDSO50, 0.400 INCH, PLASTIC, TSOP2-50

K4F661612B-TL600 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerSAMSUNG
Parts packaging codeTSOP2
package instructionTSOP2,
Contacts50
Reach Compliance Codecompliant
ECCN codeEAR99
access modeFAST PAGE
Maximum access time60 ns
Other featuresRAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH/SELF REFRESH
JESD-30 codeR-PDSO-G50
length20.95 mm
memory density67108864 bit
Memory IC TypeFAST PAGE DRAM
memory width16
Number of functions1
Number of ports1
Number of terminals50
word count4194304 words
character code4000000
Operating modeASYNCHRONOUS
Maximum operating temperature70 °C
Minimum operating temperature
organize4MX16
Package body materialPLASTIC/EPOXY
encapsulated codeTSOP2
Package shapeRECTANGULAR
Package formSMALL OUTLINE, THIN PROFILE
Peak Reflow Temperature (Celsius)240
Certification statusNot Qualified
Maximum seat height1.2 mm
self refreshYES
Maximum supply voltage (Vsup)3.6 V
Minimum supply voltage (Vsup)3 V
Nominal supply voltage (Vsup)3.3 V
surface mountYES
technologyCMOS
Temperature levelCOMMERCIAL
Terminal formGULL WING
Terminal pitch0.8 mm
Terminal locationDUAL
Maximum time at peak reflow temperature30
width10.16 mm
K4F661612B,K4F641612B
CMOS DRAM
4M x 16bit CMOS Dynamic RAM with Fast Page Mode
DESCRIPTION
This is a family of 4,194,304 x 16 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory
cells within the same row. Refresh cycle(4K Ref. or 8K Ref.), access time (-45, -50 or -60), power consumption(Normal or Low power)
are optional features of this family. All of this family have CAS-before-RAS refresh, RAS-only refresh and Hidden refresh capabilities.
Furthermore, Self-refresh operation is available in L-version. This 4Mx16 Fast Page Mode DRAM family is fabricated using Samsung′s
advanced CMOS process to realize high band-width, low power consumption and high reliability.
FEATURES
• Part Identification
- K4F661612B-TC/L(3.3V, 8K Ref., TSOP)
- K4F641612B-TC/L(3.3V, 4K Ref., TSOP)
• Fast Page Mode operation
• 2CAS Byte/Word Read/Write operation
• CAS-before-RAS refresh capability
• RAS-only and Hidden refresh capability
• Self-refresh capability (L-ver only)
• Fast parallel test mode capability
• LVTTL(3.3V) compatible inputs and outputs
Unit : mW
• Early Write or output enable controlled write
• JEDEC Standard pinout
• Available in Plastic TSOP(II) packages
• +3.3V±0.3V power supply
4K
468
432
396
Active Power Dissipation
Speed
-45
-50
-60
Refresh Cycles
Part
NO.
K4F661612B*
K4F641612B
Refresh
cycle
8K
4K
Refresh time
Normal
64ms
L-ver
128ms
RAS
UCAS
LCAS
W
8K
360
324
288
FUNCTIONAL BLOCK DIAGRAM
Control
Clocks
Vcc
Vss
Lower
Data in
Buffer
Sense Amps & I/O
Lower
Data out
Buffer
Upper
Data in
Buffer
Upper
Data out
Buffer
VBB Generator
* Access mode & RAS only refresh mode
: 8K cycle/64ms(Normal), 8K cycle/128ms(L-ver.)
CAS-before-RAS & Hidden refresh mode
: 4K cycle/64ms(Normal), 4K cycle/128ms(L-ver.)
Refresh Timer
Refresh Control
Refresh Counter
Row Decoder
DQ0
to
DQ7
Performance Range
Speed
-45
-50
-60
Memory Array
4,194,304 x 16
Cells
OE
DQ8
to
DQ15
t
RAC
45ns
50ns
60ns
t
CAC
12ns
13ns
15ns
t
RC
80ns
90ns
110ns
t
PC
31ns
35ns
40ns
A0~A12
(A0~A11)*1
A0~A8
(A0~A9)*1
Row Address Buffer
Col. Address Buffer
Column Decoder
Note) *1 : 4K Refresh
SAMSUNG ELECTRONICS CO., LTD.
reserves the right to
change products and specifications without notice.
stm32f103rc opens TIM2 and enters HardFault_Handler
stm32f103rc opens TIM2 into HardFault_Handler. When TIM2 initialization is not called, it can work normally! I don't know why...
varrior stm32/stm8
Three-phase SPWm
Help! Three-phase SPWM wave, two phases differ by 120 degrees, based on 51 single chip microcomputer, help design program...
小飞韩 LED Zone
Application of LonWorks Technology in Building Automation System
Based on a brief introduction to the open LonWorks fieldbus control technology, this paper gives a specific example of the application of LonWorks technology in building automation systems, and analyz...
frozenviolet Embedded System
Template keyboard output Chinese in EVC
Could you please tell me how to write in EVC so that the template keyboard can output Chinese?...
wanglq2005 Embedded System
Passband gain
P359 of the fourth edition of Tong Shibai's Model Electronics says: The ratio of the output voltage to the input voltage when the frequency is 0 is the passband gain, but how come (7.3.35) and (7.3.36...
msddw Analog electronics
em357 zigbee adds the node to the coordinator table address operation
As the title says, I have no idea how to make a new node in em357 automatically added to the coordinator's table address after joining the network....
hbmcjxd RF/Wirelessly

EEWorld
subscription
account

EEWorld
service
account

Automotive
development
circle

Robot
development
community

Index Files: 2264  2597  948  1945  186  46  53  20  40  4 
Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
Room 1530, 15th Floor, Building B, No. 18 Zhongguancun Street, Haidian District, Beijing Telephone: (010) 82350740 Postal Code: 100190
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved 京ICP证060456号 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号