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BZT55B36L1G

Description
Zener Diode
CategoryDiscrete semiconductor    diode   
File Size357KB,7 Pages
ManufacturerTaiwan Semiconductor
Websitehttp://www.taiwansemi.com/
Environmental Compliance
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BZT55B36L1G Overview

Zener Diode

BZT55B36L1G Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerTaiwan Semiconductor
Reach Compliance Codecompliant
ECCN codeEAR99
JESD-609 codee3
Humidity sensitivity level1
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Terminal surfaceMatte Tin (Sn) - with Nickel (Ni) barrier
Maximum time at peak reflow temperatureNOT SPECIFIED
BZT55B2V4 - BZT55B75
Taiwan Semiconductor
500mW 2% Zener Diodes
FEATURES
Wide zener voltage range selection: 2.4V to 75V
VZ Tolerance Selection of ± 2%
Surface device type mountin
Compliant to RoHS directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
● Halogen-free according to IEC 61249-2-21
KEY PARAMETERS
PARAMETER
V
Z
Test current I
ZT
P
tot
V
F
at I
F
=10mA
T
J
Max.
Package
Configuration
VALUE
2.4-75
5
500
1
175
LS34
Single dice
UNIT
V
mA
mW
V
°C
APPLICATIONS
Low voltage stabilzers or voltage references
Adapters
Lighting application
On-board DC/DC converter
MECHANICAL DATA
● Case: Mini-MELF (Glass Seal)
● Packing code with suffix "G" means green compound
(halogen-free)
● Terminal: Matte tin plated leads, solderable per J-STD-002
● Polarity: Indicated by cathode band
● Weight: 29 ± 2.5mg (approximately)
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25°C unless otherwise noted)
PARAMETER
Forward voltage @ I
F
=10mA
Total power dissipation
Junction temperature range
Storage temperature range
SYMBOL
V
F
P
tot
T
J
T
STG
PART NUMBER
1
500
-65 to +175
-65 to +175
UNIT
V
mW
°C
°C
THERMAL PERFORMANCE
PARAMETER
Junction-to-ambient thermal resistance
SYMBOL
R
ӨJA
LIMIT
500
UNIT
°C/W
1
Version:H1610
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