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ABL9001-854

Description
Mixer Diode, Low Barrier, X Band, 6.5dB Noise Figure, Silicon,
CategoryDiscrete semiconductor    diode   
File Size311KB,6 Pages
ManufacturerAdvanced Semiconductor, Inc.
Download Datasheet Parametric View All

ABL9001-854 Overview

Mixer Diode, Low Barrier, X Band, 6.5dB Noise Figure, Silicon,

ABL9001-854 Parametric

Parameter NameAttribute value
MakerAdvanced Semiconductor, Inc.
package instructionS-XXMW-F3
Reach Compliance Codeunknown
ECCN codeEAR99
ConfigurationSERIES CONNECTED, CENTER TAP, 2 ELEMENTS
Maximum diode capacitance0.3 pF
Diode component materialsSILICON
Diode typeMIXER DIODE
frequency bandX BAND
JESD-30 codeS-XXMW-F3
maximum noise index6.5 dB
Number of components2
Number of terminals3
Package body materialUNSPECIFIED
Package shapeSQUARE
Package formMICROWAVE
Pulse input maximum power0.075 W
Certification statusNot Qualified
surface mountYES
technologySCHOTTKY
Terminal formFLAT
Terminal locationUNSPECIFIED
Schottky barrier typeLOW BARRIER
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