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7164S25PGI

Description
Standard SRAM, 8KX8, 25ns, CMOS, PDIP28, 0.600 INCH, PLASTIC, DIP-28
Categorystorage    storage   
File Size134KB,11 Pages
ManufacturerIDT (Integrated Device Technology)
Environmental Compliance
Download Datasheet Parametric View All

7164S25PGI Overview

Standard SRAM, 8KX8, 25ns, CMOS, PDIP28, 0.600 INCH, PLASTIC, DIP-28

7164S25PGI Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerIDT (Integrated Device Technology)
Parts packaging codeDIP
package instruction0.600 INCH, PLASTIC, DIP-28
Contacts28
Reach Compliance Codecompliant
ECCN codeEAR99
Maximum access time25 ns
I/O typeCOMMON
JESD-30 codeR-PDIP-T28
JESD-609 codee3
memory density65536 bit
Memory IC TypeSTANDARD SRAM
memory width8
Humidity sensitivity level1
Number of functions1
Number of terminals28
word count8192 words
character code8000
Operating modeASYNCHRONOUS
Maximum operating temperature85 °C
Minimum operating temperature-40 °C
organize8KX8
Output characteristics3-STATE
Package body materialPLASTIC/EPOXY
encapsulated codeDIP
Encapsulate equivalent codeDIP28,.6
Package shapeRECTANGULAR
Package formIN-LINE
Parallel/SerialPARALLEL
Peak Reflow Temperature (Celsius)260
power supply5 V
Certification statusNot Qualified
Maximum standby current0.015 A
Minimum standby current4.5 V
Maximum slew rate0.17 mA
Maximum supply voltage (Vsup)5.5 V
Minimum supply voltage (Vsup)4.5 V
Nominal supply voltage (Vsup)5 V
surface mountNO
technologyCMOS
Temperature levelINDUSTRIAL
Terminal surfaceMatte Tin (Sn) - annealed
Terminal formTHROUGH-HOLE
Terminal pitch2.54 mm
Terminal locationDUAL
Maximum time at peak reflow temperature30
CMOS Static RAM
64K (8K x 8-Bit)
Features
High-speed address/chip select access time
– Military: 20/25/35/45/55/70/85/100ns (max.)
– Industrial: 25/35ns (max.)
– Commercial: 15/20/25/35ns (max.)
Low power consumption
Battery backup operation – 2V data retention voltage
(L Version only)
Produced with advanced CMOS high-performance
technology
Inputs and outputs directly TTL-compatible
Three-state outputs
Available in 28-pin DIP, CERDIP and SOJ
Military product compliant to MIL-STD-883, Class B
IDT7164S/LS
IDT7164L/LL
Description
The IDT7164 is a 65,536 bit high-speed static RAM organized as 8K
x 8. It is fabricated using IDT’s high-performance, high-reliability CMOS
technology.
Address access times as fast as 15ns are available and the circuit
offers a reduced power standby mode. When
CS
1
goes HIGH or CS
2
goes LOW, the circuit will automatically go to, and remain in, a low-
power stand by mode. The low-power (L) version also offers a battery
backup data retention capability at power supply levels as low as 2V.
All inputs and outputs of the IDT7164 are TTL-compatible and
operation is from a single 5V supply, simplifying system designs. Fully
static asynchronous circuitry is used, requiring no clocks or refreshing
for operation.
The IDT7164 is packaged in a 28-pin 300 mil DIP and SOJ and a 28-
pin 600 mil CERDIP.
Military grade product is manufactured in compliance with the latest
revision of MIL-STD-883, Class B, making it ideally suited to military
temperature applications demanding the highest level of performance
and reliability.
Functional Block Diagram
A
0
V
CC
ADDRESS
DECODER
65,536 BIT
MEMORY ARRAY
GND
A
12
0
7
I/O
0
I/O CONTROL
I/O
7
CS
1
CS
2
OE
WE
CONTROL
LOGIC
2967 drw 01
APRIL 2009
1
©2007 Integrated Device Technology, Inc.
DSC-2967/14
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