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CTB24-800BWPT

Description
Alternistor TRIAC, 800V V(DRM), 25A I(T)RMS, TO-220AB, TO-220AB, 3 PIN
CategoryAnalog mixed-signal IC    Trigger device   
File Size118KB,2 Pages
ManufacturerCrydom
Websitehttp://www.crydom.com/en/index.shtml
Environmental Compliance
Download Datasheet Parametric View All

CTB24-800BWPT Overview

Alternistor TRIAC, 800V V(DRM), 25A I(T)RMS, TO-220AB, TO-220AB, 3 PIN

CTB24-800BWPT Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerCrydom
Parts packaging codeTO-220AB
package instructionFLANGE MOUNT, R-PSFM-T3
Contacts3
Reach Compliance Codecompliant
Other featuresUL RECOGNIZED
Shell connectionMAIN TERMINAL 2
ConfigurationSINGLE
Critical rise rate of minimum off-state voltage1000 V/us
Maximum DC gate trigger current50 mA
Maximum DC gate trigger voltage1.3 V
Maximum holding current75 mA
JEDEC-95 codeTO-220AB
JESD-30 codeR-PSFM-T3
JESD-609 codee3
Maximum leakage current0.005 mA
Number of components1
Number of terminals3
Maximum operating temperature125 °C
Minimum operating temperature-40 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Certification statusNot Qualified
Maximum rms on-state current25 A
Off-state repetitive peak voltage800 V
surface mountNO
Terminal surfaceMATTE TIN
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
Trigger device typeALTERNISTOR TRIAC
POWER COMPONENTS
Applications
• Phase Control
• Static Switching
• Light Dimming
• Motor Speed Control
• Kitchen Equipment
• Power Tools
• Solenoid Valve Controls:
• Dishwashers
• Washing Machines
>
Suitable for General Purpose AC Switching
>
Alternistor/No Snubber Versions
for Inductive Loads
>
Logic Level Available for use with
Microcontrollers and Low Level Devices
>
IGT Range 35-50 mA (Q1)
>
V
DRM
/V
RMM
400, 600, 800, 1200V
CTA/CTB24
24Amp - 400/600/800/1200V - TRIAC
SYMBOL
I
T(RMS)
I
TSM
I
2
t
di/dt
I
GM
P
G(AV)
Tstg
Tj
V
ISO
Absolute Maximum Ratings
RMS On-State Current (full sine wave)
Non Repetitive Surge Peak On-State Current
(Full Cycle, Tj Initial = 25˚C)
I
2
t Value for fusing
Critical rate of rise of on-state current
I
G
=2 x I
GT
, tr<100 ns, Tj = 125˚C
Peak Gate Current @ Tj = 125˚C
Average Gate Power Dissipation @ Tj = 125˚C
Tc = 100˚C
Tc = 75˚C
CONDITIONS
TO-220AB
TO-220AB Iso
F =50 Hz
F =60 Hz
tp = 10 ms
F =120 Hz
tp = 20 µs
RATING
24A
250A
260A
340A
2
s
50A/µs
4A
1W
-40 to +150˚C
-40 to +125˚C
2500 V
RMS
A1
A2
G
Storage Temperature Range
Operating Junction Temperature Range
Isolation Voltage (CTA Series only)
A2
TO-220AB Isolated
(CTA24)
Electrical Characteristics
ALTERNISTOR/NO SNUBBER AND LOGIC LEVEL (3 Quadrants)
I
GT
MAX @ V
D
=12 V, R
L
= 30Ω
NOTE 1
QI-II-III
QI-II-III
Tj = 125˚C
QI-II-III
V
GT
MAX @ V
D
=12 V, R
L
= 30Ω
CW
35mA
1.3V
0.2V
50mA
QI-III
Q-II
Tj = 125˚C
Tj = 125˚C
50mA
80mA
500V/µs
13A/ms
BW
50mA
1.3V
0.2V
75mA
70mA
100mA
1000V/µs
22A/ms
B
NOTE 1
NOTE 1
A1
A2
G
V
GD
MIN @ V
D
=V
DRM
, R
L
= 3.3kΩ
I
H
MAX @ I
T
= 500 mA
I
L
MAX @ I
G
= 1.2 I
GT
I
L
MAX @ I
G
= 1.2 I
GT
A2
TO-220AB Non-Isolated
(CTB24)
NOTE 2
dv/dt MIN @ V
D
= 67%V
DRM
(gate open)
NOTE 2
(di/dt)c MIN without Snubber
NOTE 2
G
A1
STANDARD (4 Quadrants)
I
GT
MAX @ V
D
=12 V, R
L
= 30Ω
I
GT
MAX @ V
D
=12 V, R
L
= 30Ω
QI-II-III
QIV
Q-All
Tj = 125˚C
Q-All
50mA
100mA
1.3V
0.2V
80mA
V
GT
MAX @ V
D
=12 V, R
L
= 30Ω
V
GD
MIN @ V
D
=V
DRM
, R
L
= 3.3kΩ
I
H
MAX @ I
T
= 500 mA
NOTE 2
I
L
MAX @ I
G
= 1.2 I
GT
I
L
MAX @ I
G
= 1.2 I
GT
dv/dt MIN @ V
D
= 67%V
DRM
(gate open)
(dv/dt)c MIN @ (di/dt)c = 13.3 A/ms
NOTE 2
QI-III-IV
Q-II
Tj = 125˚C
Tj = 125˚C
NOTE 2
70mA
160mA
500V/µs
10V/µs
ISO9001 Certified
GENERAL NOTES
1. Minimum IGT is guaranted at 5% of IGT max.
2. For both polarities of A2 referenced to A1
3. All parameters at 25 degrees C unless otherwise specified.

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