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MBR20100-1PBF

Description
Rectifier Diode, Schottky, 1 Phase, 2 Element, 20A, 100V V(RRM), Silicon, TO-262AA, ROHS COMPLIANT, PLASTIC, TO-262, 3 PIN
CategoryDiscrete semiconductor    diode   
File Size134KB,6 Pages
ManufacturerVishay
Websitehttp://www.vishay.com
Environmental Compliance  
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MBR20100-1PBF Overview

Rectifier Diode, Schottky, 1 Phase, 2 Element, 20A, 100V V(RRM), Silicon, TO-262AA, ROHS COMPLIANT, PLASTIC, TO-262, 3 PIN

MBR20100-1PBF Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerVishay
Parts packaging codeTO-262AA
package instructionR-PSIP-T3
Contacts3
Reach Compliance Codecompliant
ECCN codeEAR99
applicationGENERAL PURPOSE
Shell connectionCATHODE
ConfigurationCOMMON CATHODE, 2 ELEMENTS
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
JEDEC-95 codeTO-262AA
JESD-30 codeR-PSIP-T3
Maximum non-repetitive peak forward current850 A
Number of components2
Phase1
Number of terminals3
Maximum operating temperature150 °C
Minimum operating temperature-65 °C
Maximum output current20 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formIN-LINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Certification statusNot Qualified
Maximum repetitive peak reverse voltage100 V
surface mountNO
technologySCHOTTKY
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
MBRB2080/90/100CTPbF, MBR2080/90/100CT-1PbF
Vishay High Power Products
Schottky Rectifier,
2 x 10 A
MBRB20..CTPbF
MBR20..CT-1PbF
FEATURES
• 150 °C T
J
operation
• Low forward voltage drop
• High frequency operation
• Center tap D
2
PAK and TO-262 packages
• High purity, high temperature epoxy encapsulation for
enhanced mechanical strength and moisture resistance
• Guard ring for enhanced ruggedness and long term
reliability
• Lead (Pb)-free
• Designed and qualified for Q101 level
Base
common
cathode
2
Base
common
cathode
2
2
1 Common
3
cathode Anode
Anode
2
1 Common
3
Anode cathode Anode
DESCRIPTION
This center tap Schottky rectifier has been optimized for low
reverse leakage at high temperature. The proprietary barrier
technology allows for reliable operation up to 150 °C
junction temperature. Typical applications are in switching
power supplies, converters, freewheeling diodes, and
reverse battery protection.
D
2
PAK
TO-262
PRODUCT SUMMARY
I
F(AV)
V
R
2 x 10 A
80 to 100 V
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
I
F(AV)
I
FRM
V
RRM
I
FSM
V
F
T
J
t
p
= 5 µs sine
10 Apk, T
J
= 125 °C
Range
CHARACTERISTICS
Rectangular waveform (per device)
T
C
= 133 °C (per leg)
VALUES
20
20
80 to 100
850
0.70
- 65 to 150
UNITS
A
V
A
V
°C
VOLTAGE RATINGS
PARAMETER
Maximum DC reverse voltage
Maximum working peak reverse voltage
SYMBOL
V
R
V
RWM
MBRB2080CTPbF
MBR2080CT-1PbF
80
MBRB2090CTPbF
MBR2090CT-1PbF
90
MBRB20100CTPbF
MBR20100CT-1PbF
100
UNITS
V
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Maximum average
forward current
per leg
per device
SYMBOL
I
F(AV)
I
FRM
TEST CONDITIONS
T
C
= 133 °C, rated V
R
Rated V
R
, square wave, 20 kHz, T
C
= 133 °C
5 µs sine or 3 µs rect.
pulse
Following any rated load ondition
and with rated V
RRM
applied
VALUES
10
20
20
850
150
0.5
24
mJ
A
UNITS
Peak repetitive forward current per leg
Non-repetitive peak surge current
I
FSM
Surge applied at rated load conditions halfwave,
single phase, 60 Hz
2.0 µs, 1.0 kHz
T
J
= 25 °C, I
AS
= 2 A, L = 12 mH
Peak repetitive reverse surge current
Non-repetitive avalanche energy per leg
I
RRM
E
AS
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 94306
Revision: 01-Dec-08
For technical questions, contact: diodes-tech@vishay.com
www.vishay.com
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