SMBJ5.0 datasheet, PDF - EEWORLD Datasheet

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SMBJ5.0: Description600 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA; Categorysemiconductor Discrete semiconductor; File Size224KB，4 Pages; ManufacturerGood-Ark; Websitehttp://www.goodark.com/

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SMBJ5.0 Overview

600 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA

SMBJ5.0 Parametric

Parameter Name	Attribute value
Number of terminals	2
Number of components	1
Maximum breakdown voltage	7.82 V
Minimum breakdown voltage	6.4 V
Processing package description	Plastic, SMB, 2 PIN
state	TRANSFERRED
packaging shape	Rectangle
Package Size	SMALL OUTLINE
surface mount	Yes
Terminal form	C BEND
terminal coating	NOT SPECIFIED
Terminal location	pair
Packaging Materials	Plastic/Epoxy
Craftsmanship	AVALANCHE
structure	single
Diode component materials	silicon
polarity	unidirectional
Diode type	TRANS voltage SUPPRESSOR diode
shutdown voltage	5 V
Maximum non-repetitive peak speed power	600 W

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SMBJ5.0 thru 440CA

Surface Mount Transient Voltage Suppressors

Peak Pulse Power 600W Stand-off Voltage 5.0 to 440V

Features

Plastic package has Underwriters Laboratory Flammability

Classification 94V-0

Low profile package with built-in strain relief for surface

mounted applications

Glass passivated junction

Low incremental surge resistance, excellent clamping capability

600W peak pulse power capability with a 10/1000us

waveform, repetition rate (duty cycle): 0.01%

Very fast response time

High temperature soldering guaranteed:

250

C/10 seconds at terminals

Mechanical Data

Case: JEDEC DO-214AA(SMB J-Bend) molded plastic over

passivated junction

Terminals: Solder plated, solderable per MIL-STD-750,

Method 2026

Polarity: For unidirectional types the band denotes the cathode,

which is positive with respect to the anode under normal TVS

operation

Weight: 0.003oz., 0.093g

Devices for Bidirectional Applications

For bi-directional devices, use suffix CA (e.g. SMBJ10CA). Electrical characteristics apply in both directions.

Maximum Ratings and Thermal Characteristics

(Ratings at 25

C ambient temperature unless otherwise specified.)

Parameter

Peak pulse power dissipation with

a 10/1000

s waveform

(1,2)

(see Fig. 1)

Peak pulse current with a 10/1000

s waveform

(1)

Peak forward surge current 8.3ms single half sine-wave

uni-directional only

(2)

Typical thermal resistance, junction to ambient

(4)

Typical thermal resistance, junction to lead

Operating junction and storage temperature range

Notes:

Symbol

PPM

FSM

, T

STG

Value

Minimum 600

See Next Table

100

-55 to +150

Unit

C/W

1. Non-repetitive current pulse, per Fig.3 and derated above T

=25

C per Fig. 2

2. Mounted on 0.2 x 0.2" (5.0 x 5.0 mm) copper pads to each terminal

3. Mounted on minimum recommended pad layout

589

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