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SMBJ5.0A

Description
600 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA
Categorysemiconductor    Discrete semiconductor   
File Size224KB,4 Pages
ManufacturerGood-Ark
Websitehttp://www.goodark.com/
Download Datasheet Parametric View All

SMBJ5.0A Overview

600 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA

SMBJ5.0A Parametric

Parameter NameAttribute value
Number of terminals2
Number of components1
Maximum breakdown voltage7 V
Minimum breakdown voltage6.4 V
Processing package descriptionPLASTIC PACKAGE-2
stateACTIVE
packaging shapeRectangle
Package SizeSMALL OUTLINE
surface mountYes
Terminal formC BEND
terminal coatingtin lead
Terminal locationpair
Packaging MaterialsPlastic/Epoxy
CraftsmanshipAVALANCHE
structuresingle
Diode component materialssilicon
Maximum power consumption limit1.38 W
polarityunidirectional
Diode typeTRANS voltage SUPPRESSOR diode
shutdown voltage5 V
Maximum non-repetitive peak speed power600 W
SMBJ5.0 thru 440CA
Surface Mount Transient Voltage Suppressors
Peak Pulse Power 600W Stand-off Voltage 5.0 to 440V
Features
Plastic package has Underwriters Laboratory Flammability
Classification 94V-0
Low profile package with built-in strain relief for surface
mounted applications
Glass passivated junction
Low incremental surge resistance, excellent clamping capability
600W peak pulse power capability with a 10/1000us
waveform, repetition rate (duty cycle): 0.01%
Very fast response time
High temperature soldering guaranteed:
250
o
C/10 seconds at terminals
Mechanical Data
Case: JEDEC DO-214AA(SMB J-Bend) molded plastic over
passivated junction
Terminals: Solder plated, solderable per MIL-STD-750,
Method 2026
Polarity: For unidirectional types the band denotes the cathode,
which is positive with respect to the anode under normal TVS
operation
Weight: 0.003oz., 0.093g
Devices for Bidirectional Applications
For bi-directional devices, use suffix CA (e.g. SMBJ10CA). Electrical characteristics apply in both directions.
Maximum Ratings and Thermal Characteristics
(Ratings at 25
o
C ambient temperature unless otherwise specified.)
Parameter
Peak pulse power dissipation with
a 10/1000
u
s waveform
(1,2)
(see Fig. 1)
Peak pulse current with a 10/1000
u
s waveform
(1)
Peak forward surge current 8.3ms single half sine-wave
uni-directional only
(2)
Typical thermal resistance, junction to ambient
(4)
Typical thermal resistance, junction to lead
Operating junction and storage temperature range
Notes:
Symbol
P
PPM
I
PPM
I
FSM
R
θ
JA
R
θ
JL
T
J
, T
STG
Value
Minimum 600
See Next Table
100
100
20
-55 to +150
o
Unit
W
A
A
C/W
C/W
o
o
C
1. Non-repetitive current pulse, per Fig.3 and derated above T
A
=25
o
C per Fig. 2
2. Mounted on 0.2 x 0.2" (5.0 x 5.0 mm) copper pads to each terminal
3. Mounted on minimum recommended pad layout
589

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