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MSD42WT1, MSD42T1
Preferred Device
NPN Silicon General
Purpose High Voltage
Transistors
This NPN Silicon Planar Transistor is designed for general purpose
amplifier applications. This device is housed in the SC-70/SOT-323 and
SC−59 packages which are designed for low power surface mount
applications.
Features
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COLLECTOR
3
•
Pb−Free Package is Available
MAXIMUM RATINGS
(TA = 25°C)
Rating
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current − Continuous
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
IC
Value
300
300
6.0
150
Unit
Vdc
Vdc
Vdc
mAdc
1
2
Symbol
PD
TJ
Tstg
Max
150
150
−55X+ 150
Unit
mW
°C
°C
SC−70 (SOT−323)
CASE 419
(SCALE 2:1)
3
2
1
3
1
BASE
2
EMITTER
THERMAL CHARACTERISTICS
Rating
Power Dissipation (Note 1)
Junction Temperature
Storage Temperature Range
SC−59
CASE 318D
(SCALE 2:1)
MARKING DIAGRAMS
ELECTRICAL CHARACTERISTICS
Characteristic
Collector-Emitter Breakdown Voltage
(IC = 1.0 mAdc, IB = 0)
Collector-Base Breakdown Voltage
(IC = 100
mAdc,
IE = 0)
Emitter-Base Breakdown Voltage
(IE = 100
mAdc,
IE = 0)
Collector-Base Cutoff Current
(VCB = 200 Vdc, IE = 0)
Emitter−Base Cutoff Current
(VEB = 6.0 Vdc, IB = 0)
DC Current Gain (Note 2)
(VCE = 10 Vdc, IC = 1.0 mAdc)
(VCE = 10 Vdc, IC = 30 mAdc)
Collector-Emitter Saturation Voltage
(Note 2) (IC = 20 mAdc,
IB = 2.0 mAdc)
Symbol
V(BR)CEO
V(BR)CBO
V(BR)EBO
ICBO
IEBO
Min
300
300
6.0
−
−
Max
−
−
−
0.1
0.1
Unit
Vdc
Vdc
Vdc
mA
mA
−
hFE1
hFE2
VCE(sat)
25
40
−
−
−
0.5
Vdc
1D M
J1D M
1D = Device Marking Code
M = Date Code
ORDERING INFORMATION
Device
MSD42WT1
Package
Shipping
†
SC−70/SOT−323 3000/T
ape & Reel
MSD42WT1G SC−70/SOT−323 3000/T
ape & Reel
MSD42T1
SC−59
3000/T
ape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
1. Device mounted on a FR-4 glass epoxy printed circuit board using the minimum
recommended footprint.
2. Pulse Test: Pulse Width
≤
300
ms,
D.C.
≤
2%.
Preferred
devices are recommended choices for future use
and best overall value.
Semiconductor Components Industries, LLC, 2004
1384
January, 2004 − Rev. 6
Publication Order Number:
MSD42WT1/D
MSD42WT1, MSD42T1
120
100
hFE , DC CURRENT GAIN
80
60
40
20
0
25°C
TJ = +125°C
VCE = 10 Vdc
-55°C
0.1
1.0
IC, COLLECTOR CURRENT (mA)
10
100
Figure 10. DC Current Gain
100
Ceb @ 1MHz
C, CAPACITANCE (pF)
10
1.0
Ccb @ 1MHz
0.1
0.1
1.0
10
100
VR, REVERSE VOLTAGE (VOLTS)
1000
Figure 11. Capacitance
1.4
1.2
V, VOLTAGE (VOLTS)
1.0
0.8
0.6
0.4
0.2
0.0
0.1
1.0
10
IC, COLLECTOR CURRENT (mA)
100
VCE(sat) @ 25°C, IC/IB = 10
VCE(sat) @ 125°C, IC/IB = 10
VCE(sat) @ -55°C, IC/IB = 10
VBE(sat) @ 25°C, IC/IB = 10
VBE(sat) @ 125°C, IC/IB = 10
VBE(sat) @ -55°C, IC/IB = 10
VBE(on) @ 25°C, VCE = 10 V
VBE(on) @ 125°C, VCE = 10 V
VBE(on) @ -55°C, VCE = 10 V
Figure 12. “ON” Voltages
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1385
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