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SMBJ58A

Description
600 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA
CategoryDiscrete semiconductor    diode   
File Size36KB,3 Pages
ManufacturerSynSemi
Websitehttp://www.synsemi.com/
Environmental Compliance
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SMBJ58A Overview

600 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA

SMBJ58A Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerSynSemi
Reach Compliance Codeunknown
Breakdown voltage nominal value67.8 V
Maximum clamping voltage93.6 V
Diode typeTRANS VOLTAGE SUPPRESSOR DIODE
polarityUNIDIRECTIONAL
Maximum repetitive peak reverse voltage58 V
surface mountYES
SMBJ5.0A - 188CA
Stand-off Voltage :
5.0 to 188V
Peak Pulse Power : 600
W
FEATURES :
*
*
*
*
*
600W surge capability at 1ms
Excellent clamping capability
Low inductance
Response Time Typically < 1ns
Typical I
R
less then 1µA above 10V
SURFACE MOUNT TRANSIENT
VOLTAGE SUPPRESSOR
SMB (DO-214AA)
5.4
±
0.15
4.8
±
0.15
1.1
±
0.3
2.0
±
0.1
3.6
±
0.15
2.3
±
0.2
0.22
±
0.07
MECHANICAL DATA
*
*
*
*
*
*
Case : SMB Molded plastic
Epoxy : UL94V-O rate flame retardant
Lead : Lead Formed for Surface Mount
Polarity : Color band denotes cathode end
Mounting position : Any
Weight : 0.108 gram
Dimensions in millimeter
MAXIMUM RATINGS
Rating at 25
°
C ambient temperature unless otherwise specified.
Rating
Peak Pulse Power Dissipation on 10/1000µs waveform
(1)(2)
(Fig. 3)
Peak Pulse Current on 10/1000µs waveform
(1)
(Fig. 5)
Maximum Peak forward Surge Current
8.3 ms single half sine-wave superimposed on
rated load ( JEDEC Method )
(2)
Maximum Instantaneous Forward Voltage at I
F
= 50A
Typical Thermal resistance, Junction to ambient
Operating Junction and Storage Temperature Range
Symbol
P
PPM
I
PPM
Value
Minimum 600
See Table
Units
W
A
I
FSM
100
A
V
FM
R
θ
JA
T
J,
T
STG
3.5
100
- 55 to + 150
V
°C/w
°C
Notes :
(1) Non-repetitive Current pulse, per Fig. 5 and derated above Ta = 25
°
C per Fig. 1
(2) Mounted on 0.2 x 0.2" (5.0 x 5.0 mm) copper pads to each terminal.
Page 1 of 3
Rev. 02 : February 2, 2004
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