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SMBJ60C

Description
600 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA
CategoryDiscrete semiconductor    diode   
File Size105KB,4 Pages
ManufacturerHY Electronic
Websitehttp://www.hygroup.com.tw
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SMBJ60C Overview

600 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA

SMBJ60C Parametric

Parameter NameAttribute value
MakerHY Electronic
package instructionR-PDSO-C2
Reach Compliance Codeunknown
ECCN codeEAR99
SMBJ SERIES
SURFACE MOUNT
UNIDIRECTIONAL AND BIDIRECTIONAL
TRANSIENT VOLTAGE SUPPRESSORS
FEATURES
Rating to 200V VBR
For surface mounted applications
Reliable low cost construction utilizing molded plastic
.
REVERSE VOLTAGE
- 5.0
to
170
Volts
POWER DISSIPATION
- 600
Watts
SMB
technique
Plastic material has UL recognition 94V-0
Typical IR less than 1µA above 10V
Fast response time:typically less than 1.0ns for
.083(2.11)
.075(1.91)
.155(3.94)
.130(3.30)
Uni-direction,less than 5.0ns fo Bi-direction,from 0 Volts
to BV min
.185(4.70)
.160(4.06)
.012(.305)
.006(.152)
.096(2.44)
.084(2.13)
.060(1.52)
.030(0.76)
.008(.203)
.002(.051)
MECHANICAL DATA
Case : Molded Plastic
Polarity:by cathode band denotes uni-directional device
none cathode band denotes bi-directional device
Weight : 0.003 ounces, 0.093 grams
.220(5.59)
.200(5.08)
Dimensions in inches and(millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25℃ ambient temperature unless otherwise specified.
Single phase, half wave ,60Hz, resistive or inductive load.
For capacitive load, derate current by 20%
CHARACTERISTICS
Peak Power Dissipation at T
A
=25℃
TP=1ms (NOTE1,2)
Peak Forward Surge Current
8.3ms Single Half Sine-Wave
Super Imposed on Rated Load (JEDEC Method)
Steady State Power Dissipation at T
L
=75℃
Maximum Instantaneous Forward Voltage
at 50A for Unidirectional Devices Only (NOTE3)
Operating Temperature Range
Storage Temperature Range
SYMBOL
P
PK
VALUE
Minimum 600
UNIT
WATTS
I
FSM
P
M(AV)
V
F
T
J
T
STG
100
5.0
SEE NOTE4
-55 to + 150
-55 to + 175
AMPS
WATTS
VOLTS
NOTES:1. Non-repetitive current pulse ,per Fig. 3 and derated above T
A
=25℃ per Fig. 1.
2. Thermal Resistance junction to Lead.
3. 8.3ms single half-wave duty cycle=4 pulses per minutes maximum (uni-directional units only).
4. V
F
=3.5V on SMBJ5.0 thru SMBJ90A devices and V
F
=5.0V on SMBJ100 thru SMBJ170A devices.
~ 284 ~
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