Preliminary
Datasheet
BB502C
Built in Biasing Circuit MOS FET IC
UHF RF Amplifier
Features
•
•
•
•
R07DS0283EJ0700
(Previous: REJ03G0832-0600)
Rev.7.00
Mar 28, 2011
Built in Biasing Circuit; To reduce using parts cost & PC board space.
Low noise; NF = 1.6 dB typ. at f = 900 MHz
High gain; PG = 22 dB typ. at f = 900 MHz
Withstanding to ESD;
Built in ESD absorbing diode. Withstand up to 200V at C=200pF, Rs=0 conditions.
•
Provide mini mold packages; CMPAK-4(SOT-343mod)
Outline
RENESAS Package code: PTSP0004ZA-A
(Package name: CMPAK-4)
2
3
1
4
1. Source
2. Gate1
3. Gate2
4. Drain
Notes:
1. Marking is “BS–”.
2. BB502C is individual type number of RENESAS BBFET.
Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
Gate1 to source voltage
Gate2 to source voltage
Drain current
Channel power dissipation
Channel temperature
Storage temperature
Symbol
V
DS
V
G1S
V
G2S
I
D
Pch
Tch
Tstg
Ratings
6
+6
−0
+6
−0
20
100
150
–55 to +150
Unit
V
V
V
mA
mW
°C
°C
R07DS0283EJ0700 Rev.7.00
Mar 28, 2011
Page 1 of 10
BB502C
Preliminary
Electrical Characteristics
(Ta = 25°C)
Item
Drain to source breakdown voltage
Gate1 to source breakdown voltage
Gate2 to source breakdown voltage
Gate1 to source cutoff current
Gate2 to source cutoff current
Gate1 to source cutoff voltage
Gate2 to source cutoff voltage
Drain current
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Power gain
Noise figure
Symbol
V
(BR)DSS
V
(BR)G1SS
V
(BR)G2SS
I
G1SS
I
G2SS
V
G1S(off)
V
G2S(off)
I
D(op)
|y
fs
|
Ciss
Coss
Crss
PG
NF
Min
6
+6
+6
—
—
0.5
0.5
8
20
1.4
0.7
—
17
—
Typ
—
—
—
—
—
0.7
0.7
11
25
1.7
1.1
0.02
22
1.6
Max
—
—
—
+100
+100
1.0
1.0
14
30
2.0
1.5
0.05
—
2.2
Unit
V
V
V
nA
nA
V
V
mA
mS
pF
pF
pF
dB
dB
Test conditions
I
D
= 200
μA,
V
G1S
= V
G2S
= 0
I
G1
= +10
μA,
V
G2S
= V
DS
= 0
I
G2
= +10
μA,
V
G1S
= V
DS
= 0
V
G1S
= +5 V, V
G2S
= V
DS
= 0
V
G2S
= +5 V, V
G1S
= V
DS
= 0
V
DS
= 5 V, V
G2S
= 4 V
I
D
= 100
μA
V
DS
= 5 V, V
G1S
= 5 V
I
D
= 100
μA
V
DS
= 5 V, V
G1
= 5 V
V
G2S
= 4 V, R
G
= 180 kΩ
V
DS
= 5 V, V
G1
= 5 V, V
G2S
=4 V
R
G
= 180 kΩ, f = 1 kHz
V
DS
= 5 V, V
G1
= 5 V
V
G2S
=4 V, R
G
= 180 kΩ
f = 1 MHz
V
DS
= 5 V, V
G1
= 5 V
V
G2S
=4 V, R
G
= 180 kΩ
f = 900 MHz
R07DS0283EJ0700 Rev.7.00
Mar 28, 2011
Page 2 of 10
BB502C
Preliminary
Main Characteristics
Test Circuit for Operating Items (I
D(op)
, |yfs|, Ciss, Coss, Crss, NF, PG)
V
G2
Gate 2
Gate 1
R
G
V
G1
Drain
A
I
D
Source
Application Circuit
V
AGC
= 4 to 0.3 V
BBFET
V
DS
= 5 V
RFC
Output
Input
R
G
V
GG
= 5 V
R07DS0283EJ0700 Rev.7.00
Mar 28, 2011
Page 3 of 10
BB502C
900MHz Power Gain, Noise Figure Test Circuit
V
G1
V
G2
C4
C5
V
D
C6
Preliminary
R1
R2
C3
G2
R3
D
L3
RFC
Output (
50Ω)
L4
Input (
50Ω)
L1
L2
G1
S
C1
C2
C1, C2 :
C3 :
C4 to C6 :
R1 :
R2 :
R3 :
Variable Capacitor (10pF MAX)
Disk Capacitor (1000pF)
Air Capacitor (1000pF)
180 k
Ω
47 k
Ω
4.7 k
Ω
L1:
10
10
L2:
26
3
3
(φ1mm Copper wire)
Unit: mm
8
21
L4:
29
10
7
7
10
L3:
18
RFC:
φ1mm
Copper wire with enamel 4turns inside dia 6mm
R07DS0283EJ0700 Rev.7.00
Mar 28, 2011
Page 4 of 10
BB502C
Maximum Channel Power
Dissipation Curve
Channel Power Dissipation Pch (mW)
200
20
Preliminary
Typical Output Characteristics
V
G2S
= 4 V
V
G1
= V
DS
G
=
Drain Current I
D
(mA)
150
100
8
50
15
0
12
R
k
Ω
80
1
k
Ω
0
22
Ω
0k
27
4
330
0
50
100
150
200
0
1
2
3
4
k
Ω
12
0
16
k
Ω
k
Ω
5
Ambient Temperature Ta (°C)
Drain to Source Voltage V
DS
(V)
Drain Current vs. Gate1 Voltage
20
V
DS
= 5 V
R
G
= 120 kΩ
4V
Drain Current vs. Gate1 Voltage
20
V
DS
= 5 V
R
G
= 180 kΩ
Drain Current I
D
(mA)
16
12
3V
2V
Drain Current I
D
(mA)
16
12
3V
8
4V
2V
8
4
V
G2S
= 1 V
4
V
G2S
= 1 V
0
1
2
3
4
5
0
1
2
3
4
5
Gate1 Voltage V
G1
(V)
Gate1 Voltage V
G1
(V)
Forward Transfer Admittance
vs. Gate1 Voltage
Forward Transfer Admittance |y
fs
| (mS)
30
V
DS
= 5 V
R
G
= 120 kΩ
24
f = 1 kHz
18
2V
4V
3V
Drain Current vs. Gate1 Voltage
20
V
DS
= 5 V
R
G
= 270 kΩ
16
Drain Current I
D
(mA)
12
8
3V
4V
2V
12
4
6
V
G2S
= 1 V
V
G2S
= 1 V
0
1
2
3
4
5
0
1
2
3
4
5
Gate1 Voltage V
G1
(V)
Gate1 Voltage V
G1
(V)
R07DS0283EJ0700 Rev.7.00
Mar 28, 2011
Page 5 of 10
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