HZS-L Series
Silicon Epitaxial Planar Zener Diode for Low Noise Application
ADE-208-121A(Z)
Rev 1
Features
•
Diode noise level of this series is approximately 1/3-1/10 lower than the HZ series.
•
Low leakage, low zener impedance and maximum power dissipation of 400 mW are ideally suited for
stabilized power supply, etc.
•
Wide spectrum from 5.2V through 38V of zener voltage provide flexible application.
•
Suitable for 5mm-pitch high speed automatic insertion.
Ordering Information
Type No.
HZS-L Series
Mark
Type No.
Package Code
MHD
Outline
B
7
2
1
2
Type No.
Cathode band
1. Cathode
2. Anode
HZS-L Series
Absolute Maximum Ratings
(Ta = 25°C)
Item
Power dissipation
Junction temperature
Storage temperature
Symbol
Pd
Tj
Tstg
Value
400
200
–55 to +175
Unit
mW
°C
°C
Electrical Characteristics
(Ta = 25°C)
Zener Voltage
V
Z
(V)*
Type
HZS6L
Grade
A1
A2
A3
B1
B2
B3
C1
C2
C3
HZS7L
A1
A2
A3
B1
B2
B3
C1
C2
C3
HZS9L
A1
A2
A3
Note:
Min
5.2
5.3
5.4
5.5
5.6
5.7
5.8
6.0
6.1
6.3
6.4
6.6
6.7
6.9
7.0
7.2
7.3
7.5
7.7
7.9
8.1
1
Reverese Current
Test
Condition I
R
(µA)
Dynamic Resistance
Test
Condition
I
Z
(mA)
0.5
Test
Condition r
d
(Ω)
V
R
(V)
2.0
Max
150
Max
5.5
5.6
5.7
5.8
5.9
6.0
6.1
6.3
6.4
6.6
6.7
6.9
7.0
7.2
7.3
7.6
7.7
7.9
8.1
8.3
8.5
I
Z
(mA)
0.5
Max
1
80
0.5
60
0.5
0.5
1
3.5
60
0.5
0.5
1
6.0
60
0.5
1. Tested with DC.
2
HZS-L Series
Zener Voltage
V
Z
(V)*
Type
HZS9L
Grade
B1
B2
B3
C1
C2
C3
HZS11L
A1
A2
A3
B1
B2
B3
C1
C2
C3
HZS12L
A1
A2
A3
B1
B2
B3
C1
C2
C3
HZS15L
1
2
3
HZS16L
1
2
3
Note:
Min
8.3
8.5
8.7
8.9
9.1
9.3
9.5
9.7
9.9
10.2
10.4
10.7
10.9
11.1
11.4
11.6
11.9
12.2
12.4
12.6
12.9
13.2
13.5
13.8
14.1
14.5
14.9
15.3
15.7
16.3
1
Reverese Current
Test
Condition I
R
(µA)
Dynamic Resistance
Test
Condition
I
Z
(mA)
0.5
Test
Condition r
d
(Ω)
V
R
(V)
6.0
Max
60
Max
8.7
8.9
9.1
9.3
9.5
9.7
9.9
10.1
10.3
10.6
10.8
11.1
11.3
11.6
11.9
12.1
12.4
12.7
12.9
13.1
13.4
13.7
14.0
14.3
14.7
15.1
15.5
15.9
16.5
17.1
I
Z
(mA)
0.5
Max
1
0.5
1
8.0
80
0.5
0.5
1
10.5
80
0.5
0.5
1
13.0
80
0.5
0.5
1
14.0
80
0.5
1. Tested with DC.
3
HZS-L Series
Zener Voltage
V
Z
(V)*
Type
HZS18L
Grade
1
2
3
HZS20L
1
2
3
HZS22L
1
2
3
HZS24L
1
2
3
HZS27L
1
2
3
HZS30L
1
2
3
HZS33L
1
2
3
HZS36L
1
2
3
Min
16.9
17.5
18.1
18.8
19.5
20.2
20.9
21.6
22.3
22.9
23.6
24.3
25.2
26.2
27.2
28.2
29.2
30.2
31.2
32.2
33.2
34.2
35.3
36.4
1
Reverese Current
Test
Condition I
R
(µA)
Dynamic Resistance
Test
Condition
I
Z
(mA)
0.5
Test
Condition r
d
(Ω)
V
R
(V)
15.0
Max
80
Max
17.7
18.3
19.0
19.7
20.4
21.1
21.9
22.6
23.3
24.0
24.7
25.5
26.6
27.6
28.6
29.6
30.6
31.6
32.6
33.6
34.6
35.7
36.8
38.0
I
Z
(mA)
0.5
Max
1
0.5
1
18.0
100
0.5
0.5
1
20.0
100
0.5
0.5
1
22.0
120
0.5
0.5
1
24.0
150
0.5
0.5
1
27.0
200
0.5
0.5
1
30.0
250
0.5
0.5
1
33.0
300
0.5
Notes: 1. Tested with DC.
2. Type No. is as follows; HZS6A1L, HZS6A2L, HZS36-3L
4
HZS-L Series
Main Characteristic
10
-2
HZS12B2L
HZS20-2L
10
-3
HZS16-2L
HZS24-2L
HZS6B2L
HZS9B2L
HZS30-2L
Zener Current I
Z
(A)
10
-4
10
-5
10
-6
10
-7
10
-8
0
5
10
15
20
25
30
35
HZS36-2L
40
Zener Voltage V
Z
(V)
Fig.1 Zener current Vs. Zener voltage
0.10
(%/°C)
50
40
30
20
mV/°C
10
0
–10
–20
–30
–40
0
5
–50
10 15 20 25 30 35 40
Zener Voltage V
Z
(V)
Zener Voltage
Temperature Coefficient
γ
z
(mV/°C)
500
l
2.5 mm
3 mm
0.08
0.06
0.04
0.02
0
%/°C
400
Power Dissipation P
d
(mW)
Printed circuit board
100
×
180
×
1.6t mm
Quality: paper phenol
Zener Voltage
Temperature Coefficient
γ
z
300
l=5 mm
–0.02
–0.04
–0.06
–0.08
–0.10
200
l=10 mm
(Publication value)
100
0
0
100
150
Ambient Temperature Ta (°C)
50
200
Fig.2 Temperature Coefficient Vs. Zener voltage
Fig.3 Power Dissipation Vs. Ambient Temperature
5
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