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HZS36-2L

Description
Zener Diode, 36.05V V(Z), 2.08%, 0.4W, Silicon, Unidirectional, DO-34, MHD, 2 PIN
CategoryDiscrete semiconductor    diode   
File Size28KB,6 Pages
ManufacturerHitachi (Renesas )
Websitehttp://www.renesas.com/eng/
Download Datasheet Parametric View All

HZS36-2L Overview

Zener Diode, 36.05V V(Z), 2.08%, 0.4W, Silicon, Unidirectional, DO-34, MHD, 2 PIN

HZS36-2L Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerHitachi (Renesas )
Parts packaging codeDO-34
package instructionO-LALF-W2
Contacts2
Reach Compliance Codeunknown
ECCN codeEAR99
Other featuresLOW LEAKAGE, LOW ZENER IMPEDANCE, LOW NOISE
Shell connectionISOLATED
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeZENER DIODE
Maximum dynamic impedance300 Ω
JEDEC-95 codeDO-34
JESD-30 codeO-LALF-W2
Number of components1
Number of terminals2
Maximum operating temperature200 °C
Package body materialGLASS
Package shapeROUND
Package formLONG FORM
polarityUNIDIRECTIONAL
Maximum power dissipation0.4 W
Certification statusNot Qualified
Nominal reference voltage36.05 V
surface mountNO
technologyZENER
Terminal formWIRE
Terminal locationAXIAL
Maximum voltage tolerance2.08%
Working test current0.5 mA
HZS-L Series
Silicon Epitaxial Planar Zener Diode for Low Noise Application
ADE-208-121A(Z)
Rev 1
Features
Diode noise level of this series is approximately 1/3-1/10 lower than the HZ series.
Low leakage, low zener impedance and maximum power dissipation of 400 mW are ideally suited for
stabilized power supply, etc.
Wide spectrum from 5.2V through 38V of zener voltage provide flexible application.
Suitable for 5mm-pitch high speed automatic insertion.
Ordering Information
Type No.
HZS-L Series
Mark
Type No.
Package Code
MHD
Outline
B
7
2
1
2
Type No.
Cathode band
1. Cathode
2. Anode
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