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KSC5061YJ69Z

Description
Power Bipolar Transistor, 5A I(C), 500V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, TO-220, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size35KB,2 Pages
ManufacturerFairchild
Websitehttp://www.fairchildsemi.com/
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KSC5061YJ69Z Overview

Power Bipolar Transistor, 5A I(C), 500V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, TO-220, 3 PIN

KSC5061YJ69Z Parametric

Parameter NameAttribute value
MakerFairchild
Parts packaging codeSFM
package instructionTO-220, 3 PIN
Contacts3
Reach Compliance Codeunknown
Other featuresHIGH RELIABILITY
Maximum collector current (IC)5 A
Collector-emitter maximum voltage500 V
ConfigurationSINGLE
Minimum DC current gain (hFE)30
JEDEC-95 codeTO-220AB
JESD-30 codeR-PSFM-T3
Number of components1
Number of terminals3
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Polarity/channel typeNPN
Certification statusNot Qualified
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)18 MHz
KSC5061
NPN EPITAXIAL SILICON TRANSISTOR
TO-220
HIGH VOLTAGE AND HIGH RELIABILITY
HIGH SPEED SWITCHING: t
F
= 0.1µs
µ
WIDE SOA
ABSOLUTE MAXIMUM RATINGS
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Base Current
Collector Dissipation (T
C
=25°C)
Junction Temperature
Storage Temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
C
I
B
P
C
T
J
T
STG
Rating
800
500
7
5
10
2
50
150
-55 ~ 150
Unit
V
V
V
A
A
A
W
°C
°C
1.Base 2.Collector 3.Emitter
ELECTRICAL CHARACTERISTICS
(T
C
=25°C)
Characteristic
Collector Base Breakdown Voltage
Collector Emitter Breakdown Voltage
Emitter Base Breakdown Voltage
Collector Emitter Sustaining Voltage
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Collector Emitter Saturation Voltage
Base Emitter Saturation Voltage
Collector Output Capacitance
Current Gain Bandwidth Product
Turn On Time
Storage Time
Fall Time
Symbol
BV
CBO
BV
CEO
BV
EBO
V
CEX
(s)
I
CBO
I
EBO
h
FE
1
h
FE
2
V
CE
(sat)
V
BE
(sat)
C
OB
f
T
t
ON
t
STG
t
F
Test Conditions
I
C
= 1mA, I
E
= 0
I
C
= 5mA, R
BE
=∞
I
E
= 1mA, I
C
= 0
I
C
= 2.5A, I
B
1 = -I
B
2 =1A
L = 1mH, Clamped
V
CB
= 500V, I
E
= 0
V
EB
= 5V, I
C
= 0
V
CE
= 5V, I
C
= 0.6A
V
CE
= 5V, I
C
= 3A
I
C
= 3A, I
B
= 0.6A
I
C
= 3A, I
B
= 0.6A
V
CB
= 10V, f=1MHz
V
CE
=10V, I
C
=0.6A
V
CC
= 200V
5
I
B
1 = -2.5
I
B
2 = I
C
= 4A
R
L
= 50Ω
Min
800
500
7
500
10
10
50
1
1.5
80
18
0.5
3
0.3
Typ
Max
Unit
V
V
V
V
µA
µA
15
8
V
V
pF
MHz
µs
µs
µs
h
FE
(1) CLASSIFICATION
Classification
h
FE
1
R
15 ~ 30
O
20 ~ 40
Y
30 ~ 50
Rev. B
©
1999 Fairchild Semiconductor Corporation

KSC5061YJ69Z Related Products

KSC5061YJ69Z KSC5061RJ69Z KSC5061J69Z KSC5061OJ69Z
Description Power Bipolar Transistor, 5A I(C), 500V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, TO-220, 3 PIN Power Bipolar Transistor, 5A I(C), 500V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, TO-220, 3 PIN Power Bipolar Transistor, 5A I(C), 500V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, TO-220, 3 PIN Power Bipolar Transistor, 5A I(C), 500V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, TO-220, 3 PIN
Maker Fairchild Fairchild Fairchild Fairchild
Parts packaging code SFM SFM SFM SFM
package instruction TO-220, 3 PIN TO-220, 3 PIN TO-220, 3 PIN TO-220, 3 PIN
Contacts 3 3 3 3
Reach Compliance Code unknown unknown unknown unknown
Other features HIGH RELIABILITY HIGH RELIABILITY HIGH RELIABILITY HIGH RELIABILITY
Maximum collector current (IC) 5 A 5 A 5 A 5 A
Collector-emitter maximum voltage 500 V 500 V 500 V 500 V
Configuration SINGLE SINGLE SINGLE SINGLE
Minimum DC current gain (hFE) 30 15 8 20
JEDEC-95 code TO-220AB TO-220AB TO-220AB TO-220AB
JESD-30 code R-PSFM-T3 R-PSFM-T3 R-PSFM-T3 R-PSFM-T3
Number of components 1 1 1 1
Number of terminals 3 3 3 3
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT
Polarity/channel type NPN NPN NPN NPN
Certification status Not Qualified Not Qualified Not Qualified Not Qualified
surface mount NO NO NO NO
Terminal form THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE
Terminal location SINGLE SINGLE SINGLE SINGLE
transistor applications SWITCHING SWITCHING SWITCHING SWITCHING
Transistor component materials SILICON SILICON SILICON SILICON
Nominal transition frequency (fT) 18 MHz 18 MHz 18 MHz 18 MHz
Base Number Matches - 1 1 1

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