KSH200
KSH200
D-PAK for Surface Mount Applications
•
•
•
•
High DC Current Gain
Built-in a Damper Diode at E-C
Lead Formed for Surface Mount Applications (No Suffix)
Straight Lead (I-PAK, “ - I “ Suffix)
1
D-PAK
1.Base
1
I-PAK
3.Emitter
2.Collector
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
C
=25°C unless otherwise noted
Symbol
V
CBO
V
CEO
V
EBO
I
B
I
C
I
CP
P
C
T
J
T
STG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Base Current
Collector Current (DC)
Collector Current (Pulse)
Collector Dissipation (T
C
= 25°C)
Collector Dissipation (T
a
= 25°C)
Junction Temperature
Storage Temperature
Parameter
Value
40
25
8
1
5
10
12.5
1.4
150
- 55 ~ 150
Units
V
V
V
A
A
A
W
W
°C
°C
Electrical Characteristics
T
C
=25°C unless otherwise noted
Symbol
V
CBO
(sus)
I
CEO
I
CBO
I
EBO
h
FE
V
CE
(sat)
Parameter
* Collector Emitter Sustaining Voltage
Collector Cut-off Current
Collector Cut-off Current
Emitter Cut-off Current
* DC Current Gain
* Collector-Emitter Saturation Voltage
Test Condition
I
C
=100mA, I
B
=0
V
CB
=40V, I
E
=0
V
EBO
=8V, I
C
=0
V
CE
=1V, I
C
=500mA
V
CE
=1V, I
C
=2A
V
CE
=2V, I
C
=5A
I
C
=500mA, I
B
=50mA
I
C
=2A, I
B
=200mA
I
C
=5A, I
B
=1A
I
C
=5A, I
B
=2A
V
CE
=1V, I
C
=2A
V
CE
=10V, I
C
=100mA
V
CB
=10V, I
E
=0, f=0.1MHz
65
80
70
45
10
180
0.3
0.75
1.8
2.5
1.6
V
V
V
V
V
MHz
pF
Min.
25
Max.
100
100
Units
V
nA
nA
V
BE
(sat)
V
BE
(on)
f
T
C
ob
* Base-Emitter Saturation Voltage
* Base-Emitter On Voltage
Current Gain Bandwidth Product
Output Capacitance
* Pulse Test: PW≤300µs, Duty Cycle≤2%
©2002 Fairchild Semiconductor Corporation
Rev. A3, October 2002
KSH200
Typical Characteristics
1000
10
V
CE
(sat), V
BE
(sat) [V], SATURATION VOLTAGE
I
C
=10I
B
h
FE
, DC CURRENT GAIN
100
1
V
BE
(sat)
V
CE
=2V
V
CE
=1V
10
sat)
V
CE
(
0.1
1
0.01
0.1
1
10
0.01
0.01
0.1
1
10
I
C
[A], COLLECTOR CURRENT
I
C
[A], COLLECTOR CURRENT
Figure 1. DC current Gain
Figure 2. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
1000
10
V
CC
=30V
I
C
=10I
B
t
R
,t
D
[ns], TURN ON TIME
C
ob
[pF], CAPACITANCE
100
1
t
R
10
0.1
t
D
1
0.1
1
10
100
0.01
0.01
0.1
1
10
V
CB
[V], COLLECTOR BASE VOLTAGE
I
C
[A], COLLECTOR CURRENT
Figure 3. Collector Output Capacitance
Figure 4. Turn On Time
1000
100
t
STG
I
C
[A], COLLECTOR CURRENT
V
CC
=30V
I
C
=10I
B
I
B1
=-I
B2
t
STG
,t
F
[ns], TURN OFF TIME
10
s
0
µ
10
5m
s
50
0
1m
µ
s
s
t
F
100
DC
1
0.1
10
0.01
0.1
1
10
0.01
0.1
1
10
100
I
C
[A], COLLECTOR CURRENT
V
CE
[V], COLLECTOR-EMITTER VOLTAGE
Figure 5. Turn Off Time
Figure 6. Safe Operating Area
©2002 Fairchild Semiconductor Corporation
Rev. A3, October 2002
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