KSC2756-R datasheet, PDF - EEWORLD Datasheet

KSC2756-R: DescriptionRF Small Signal Bipolar Transistor, 0.03A I(C), 1-Element, Very High Frequency Band, Silicon, NPN, SOT-23, 3 PIN; CategoryDiscrete semiconductor The transistor; File Size132KB，3 Pages; ManufacturerSAMSUNG; Websitehttp://www.samsung.com/Products/Semiconductor/

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KSC2756-R Overview

RF Small Signal Bipolar Transistor, 0.03A I(C), 1-Element, Very High Frequency Band, Silicon, NPN, SOT-23, 3 PIN

Parameter Name	Attribute value
Maker	SAMSUNG
Parts packaging code	SOT-23
package instruction	SMALL OUTLINE, R-PDSO-G3
Contacts	3
Reach Compliance Code	unknown
ECCN code	EAR99
Maximum collector current (IC)	0.03 A
Collector-based maximum capacity	0.5 pF
Collector-emitter maximum voltage	20 V
Configuration	SINGLE
highest frequency band	VERY HIGH FREQUENCY BAND
JESD-30 code	R-PDSO-G3
Number of components	1
Number of terminals	3
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Polarity/channel type	NPN
Certification status	Not Qualified
surface mount	YES
Terminal form	GULL WING
Terminal location	DUAL
transistor applications	AMPLIFIER
Transistor component materials	SILICON
Nominal transition frequency (fT)	850 MHz

	KSC2756-R	KSC2756-O	KSC2756-Y
Description	RF Small Signal Bipolar Transistor, 0.03A I(C), 1-Element, Very High Frequency Band, Silicon, NPN, SOT-23, 3 PIN	RF Small Signal Bipolar Transistor, 0.03A I(C), 1-Element, Very High Frequency Band, Silicon, NPN, SOT-23, 3 PIN	RF Small Signal Bipolar Transistor, 0.03A I(C), 1-Element, Very High Frequency Band, Silicon, NPN, SOT-23, 3 PIN
Maker	SAMSUNG	SAMSUNG	SAMSUNG
Parts packaging code	SOT-23	SOT-23	SOT-23
package instruction	SMALL OUTLINE, R-PDSO-G3	SMALL OUTLINE, R-PDSO-G3	SMALL OUTLINE, R-PDSO-G3
Contacts	3	3	3
Reach Compliance Code	unknown	unknown	unknown
ECCN code	EAR99	EAR99	EAR99
Maximum collector current (IC)	0.03 A	0.03 A	0.03 A
Collector-based maximum capacity	0.5 pF	0.5 pF	0.5 pF
Collector-emitter maximum voltage	20 V	20 V	20 V
Configuration	SINGLE	SINGLE	SINGLE
highest frequency band	VERY HIGH FREQUENCY BAND	VERY HIGH FREQUENCY BAND	VERY HIGH FREQUENCY BAND
JESD-30 code	R-PDSO-G3	R-PDSO-G3	R-PDSO-G3
Number of components	1	1	1
Number of terminals	3	3	3
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE
Polarity/channel type	NPN	NPN	NPN
Certification status	Not Qualified	Not Qualified	Not Qualified
surface mount	YES	YES	YES
Terminal form	GULL WING	GULL WING	GULL WING
Terminal location	DUAL	DUAL	DUAL
transistor applications	AMPLIFIER	AMPLIFIER	AMPLIFIER
Transistor component materials	SILICON	SILICON	SILICON
Nominal transition frequency (fT)	850 MHz	850 MHz	850 MHz

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