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KSC2756R

Description
RF Small Signal Bipolar Transistor, 0.03A I(C), 1-Element, Very High Frequency Band, Silicon, NPN
CategoryDiscrete semiconductor    The transistor   
File Size108KB,6 Pages
ManufacturerFairchild
Websitehttp://www.fairchildsemi.com/
Download Datasheet Parametric View All

KSC2756R Overview

RF Small Signal Bipolar Transistor, 0.03A I(C), 1-Element, Very High Frequency Band, Silicon, NPN

KSC2756R Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerFairchild
package instructionSMALL OUTLINE, R-PDSO-G3
Reach Compliance Codeunknown
ECCN codeEAR99
Maximum collector current (IC)0.03 A
Collector-based maximum capacity0.5 pF
Collector-emitter maximum voltage20 V
ConfigurationSINGLE
Minimum DC current gain (hFE)60
highest frequency bandVERY HIGH FREQUENCY BAND
JESD-30 codeR-PDSO-G3
JESD-609 codee0
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeNPN
Maximum power dissipation(Abs)0.15 W
Certification statusNot Qualified
surface mountYES
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Nominal transition frequency (fT)850 MHz
KSC2756
KSC2756
Mixer for VHF TV Tuner
• High Conversion Gain : G
CE
= 23dB (TYP.)
3
2
1
SOT-23
1. Base 2. Emitter 3. Collector
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
a
=25°C unless otherwise noted
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
J
T
STG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Junction Temperature
Storage Temperature
Parameter
Value
30
20
4
30
150
150
-55 ~ +150
Units
V
V
V
mA
mW
°C
°C
Electrical Characteristics
T
a
=25°C unless otherwise noted
Symbol
I
CBO
h
FE
V
CE
(sat)
f
T
C
RE
G
CE
NF
Parameter
Collector Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Current Gain Bandwidth Product
Reverse Transfer Capacitance
Conversion Gain
Noise Figure
Test Condition
V
CB
=20V, I
E
=0
V
CE
=10V, I
C
=5mA
I
C
=10mA, I
B
=1mA
V
CE
=10V, I
C
=5mA
V
CB
=10V, I
E
=0, f=1MHz
V
CE
=10V, I
C
=3mA
f
RF
=200MHz, f
IF
=58MHz
V
CE
=10V, I
C
=3mA
f
RF
=200MHz, f
IF
=58MHz
15
500
850
0.35
23
6.5
0.5
Min.
60
Typ.
120
Max.
0.1
240
0.5
V
MHz
pF
dB
dB
Units
µA
h
FE
Classification
Classification
h
FE
R
60 ~ 120
Marking
O
90 ~ 180
Y
120 ~ 240
H2 O
h
FE
grade
©2001 Fairchild Semiconductor Corporation
Rev. A1, June 2001
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