KSD135/137/139
NPN EPITAXIAL SILICON TRANSISTOR
MEDIUM POWER LINEAR AND
SWITCHING APPLICATIONS
•
Complement to BD136 and BD140 respectively
TO-126
ABSOLUTE MAXIMUM RATINGS
Characteristic
Collector Base Voltage : BD135
: BD137
: BD139
Collector Emitter Voltage : BD135
: BD137
: BD139
Emitter Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Base Current
Collector Dissipation (T
C
=25°C)
Collector Dissipation (T
A
=25°C)
Junction Temperature
Storage Temperature
Symbol
V
CBO
Rating
45
60
80
45
60
80
5
1.5
3.0
0.5
12.5
12.5
150
-55~150
Unit
V
V
V
V
V
V
V
A
A
A
W
W
°C
°C
V
CEO
V
EBO
I
C
I
C
I
B
P
C
P
C
T
J
T
STG
1.Emitter 2.Collector3.Base
ELECTRICAL CHARACTERISTICS
(T
C
=25°C)
Characteristic
Collector Emitter Sustaining Voltage : BD135
: BD137
: BD139
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
: ALL DEVICE
: ALL DEVICE
: BD135
: BD137, BD139
Collector Emitter Saturation Voltage
Base Emitter On Voltage
Symbol
V
CEO
(sus)
I
CBO
I
EBO
h
FE1
h
FE2
h
FE3
V
CE
(Sat)
V
BE
(on)
Test Condition
I
C
=30mA, I
B
=0
V
CB
=30V, I
E
=0
V
EB
=2V, I
C
=0
V
CE
=2V, I
C
=5mA
V
CE
=5V, I
C
=0.5A
V
CE
=2V,I
C
=150mA
I
C
=500mA, I
B
=50mA
V
CE
=2V, I
C
=0.5A
Min
45
60
80
0.1
10
25
25
40
40
Typ
Max
Unit
V
V
V
µA
µA
250
160
0.5
1
V
V
h
FE
(3) CLASSIFICNTION
Classification
h
FE
3
6
40-100
10
63-160
16
100-250
Rev. B
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1999 Fairchild Semiconductor Corporation
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