E2G0023-17-41
¡ Semiconductor
MSM514400D/DL
¡ Semiconductor
This version: Jan. 1998
MSM514400D/DL
Previous version: May 1997
1,048,576-Word
¥
4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE
DESCRIPTION
The MSM514400D/DL is a 1,048,576-word
¥
4-bit dynamic RAM fabricated in Oki's silicon-gate
CMOS technology. The MSM514400D/DL achieves high integration, high-speed operation, and
low-power consumption because Oki manufactures the device in a quadruple-layer polysilicon/
single-layer metal CMOS process. The MSM514400D/DL is available in a 26/20-pin plastic SOJ, 20-
pin plastic ZIP, or 26/20-pin plastic TSOP. The MSM514400DL (the low-power version) is specially
designed for lower-power applications.
FEATURES
• 1,048,576-word
¥
4-bit configuration
• Single 5 V power supply,
±10%
tolerance
• Input
: TTL compatible, low input capacitance
• Output : TTL compatible, 3-state
• Refresh : 1024 cycles/16 ms, 1024 cycles/128 ms (L-version)
• Fast page mode, read modify write capability
•
CAS
before
RAS
refresh, hidden refresh,
RAS-only
refresh capability
• Multi-bit test mode capability
• Package options:
26/20-pin 300 mil plastic SOJ
(SOJ26/20-P-300-1.27)
(Product : MSM514400D/DL-xxSJ)
20-pin 400 mil plastic ZIP
(ZIP20-P-400-1.27)
(Product : MSM514400D/DL-xxZS)
26/20-pin 300 mil plastic TSOP
(TSOPII26/20-P-300-1.27-K) (Product : MSM514400D/DL-xxTS-K)
xx indicates speed rank.
PRODUCT FAMILY
Family
MSM514400D/DL-50
MSM514400D/DL-60
MSM514400D/DL-70
Access Time (Max.)
t
RAC
t
AA
t
CAC
t
OEA
50 ns 25 ns 13 ns 13 ns
60 ns 30 ns 15 ns 15 ns
70 ns 35 ns 20 ns 20 ns
Cycle Time
Power Dissipation
(Min.)
Operating (Max.) Standby (Max.)
90 ns
110 ns
130 ns
550 mW
495 mW
440 mW
5.5 mW/
1.1 mW (L-version)
1/17
¡ Semiconductor
MSM514400D/DL
ELECTRICAL CHARACTERISTICS
Absolute Maximum Ratings
Parameter
Voltage on Any Pin Relative to V
SS
Short Circuit Output Current
Power Dissipation
Operating Temperature
Storage Temperature
Symbol
V
T
I
OS
P
D
*
T
opr
T
stg
Rating
–1.0 to 7.0
50
1
0 to 70
–55 to 150
Unit
V
mA
W
°C
°C
*: Ta = 25°C
Recommended Operating Conditions
Parameter
Power Supply Voltage
Input High Voltage
Input Low Voltage
Symbol
V
CC
V
SS
V
IH
V
IL
Min.
4.5
0
2.4
–1.0
Typ.
5.0
0
—
—
Max.
5.5
0
6.5
0.8
(Ta = 0°C to 70°C)
Unit
V
V
V
V
Capacitance
Parameter
Input Capacitance (A0 - A9)
Input Capacitance (RAS,
CAS, WE, OE)
Output Capacitance (DQ1 - DQ4)
Symbol
C
IN1
C
IN2
C
I/O
Typ.
—
—
—
(V
CC
= 5 V ±10%, Ta = 25°C, f = 1 MHz)
Max.
6
7
7
Unit
pF
pF
pF
4/17
¡ Semiconductor
DC Characteristics
MSM514400D/DL
(V
CC
= 5 V ±10%, Ta = 0°C to 70°C)
Condition
MSM514400 MSM514400 MSM514400
D/DL-50
D/DL-60
D/DL-70
Unit Note
Min.
Max.
V
CC
0.4
10
Min.
2.4
0
–10
Max.
V
CC
0.4
10
Min.
2.4
0
–10
Max.
V
CC
0.4
10
V
V
mA
2.4
0
–10
Parameter
Output High Voltage
Output Low Voltage
Input Leakage Current
Symbol
V
OH
I
OH
= –5.0 mA
V
OL
I
OL
= 4.2 mA
0 V
£
V
I
£
6.5 V;
I
LI
All other pins not
under test = 0 V
DQ disable
0 V
£
V
O
£
5.5 V
RAS, CAS
cycling,
t
RC
= Min.
RAS, CAS
= V
IH
I
CC2
RAS, CAS
≥
V
CC
–0.2 V
RAS
cycling,
I
CC3
CAS
= V
IH
,
t
RC
= Min.
RAS
= V
IH
,
I
CC5
CAS
= V
IL
,
DQ = enable
I
CC6
RAS
cycling,
CAS
before
RAS
RAS
= V
IL
,
I
CC7
CAS
cycling,
t
PC
= Min.
t
RC
= 125
ms,
I
CC10
CAS
before
RAS,
t
RAS
£
1
ms
Output Leakage Current
Average Power
Supply Current
(Operating)
Power Supply
Current (Standby)
Average Power
Supply Current
(RAS-only Refresh)
Power Supply
Current (Standby)
Average Power
Supply Current
(CAS before
RAS
Refresh)
Average Power
Supply Current
(Fast Page Mode)
Average Power
Supply Current
(Battery Backup)
I
LO
–10
10
–10
10
–10
10
mA
I
CC1
—
—
—
—
—
100
2
1
200
100
—
—
—
—
—
90
2
1
200
90
—
—
—
—
—
80
2
1
200
80
mA 1, 2
mA
mA
1
1, 5
mA 1, 2
—
5
—
5
—
5
mA
1
—
100
—
90
—
80
mA 1, 2
—
80
—
70
—
60
mA 1, 3
—
300
—
300
—
300
mA
1, 4,
5
Notes : 1.
2.
3.
4.
5.
I
CC
Max. is specified as I
CC
for output open condition.
The address can be changed once or less while
RAS
= V
IL
.
The address can be changed once or less while
CAS
= V
IH
.
V
CC
– 0.2 V
£
V
IH
£
6.5 V, –1.0 V
£
V
IL
£
0.2 V.
L-version.
5/17
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