KSP2907A PNP General Purpose Amplifier
July 2006
KSP2907A
PNP General Purpose Amplifier
Features
• Collector-Emitter Voltage: V
CEO
= 60V
• Collector Power Dissipation: P
C
(max)=625mW
• Suffix “-C” means Center Collector (1.Emitter 2.Collector 3.Base)
• Available as PN2907A
1 2 3
tm
TO-92
1. Emitter 2. Base 3. Collector
Absolute Maximum Ratings *
T
Symbol
V
CBO
V
CEO
V
EBO
I
C
T
J
T
stg
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector current
Junction Temperature
Storage Temperature
a
= 25°C unless otherwise noted
Parameter
Value
-60
-60
-5
-600
+150
-55 ~ +150
Units
V
V
V
mA
°C
°C
* 1. These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
T =25°C unless otherwise noted
a
Symbol
P
C
R
θJC
R
θJA
Parameter
Collector Power Dissipation, by R
θJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
a
Max
625
83.3
200
Units
mW
°C/W
°C/W
Electrical Characteristics *
T
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
h
FE
= 25°C unless otherwise noted
Parameter
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
DC Current Gain
Test Condition
I
C
= -10µA, I
E
= 0
I
C
= -10mA, I
B
= 0
I
E
= -10µA, I
C
= 0
V
CB
= -50V, I
E
= 0
V
CE
= -10V, I
C
= -0.1mA,
V
CE
= -10V, I
C
= -1mA,
V
CE
= -10V, I
C
= -10mA,
V
CE
= -10V, I
C
= -150mA,
V
CE
= -10V, I
C
= -500mA,
I
C
= -150mA, I
B
= -15mA
I
C
= -500mA, I
B
= -50mA
I
C
= -150mA, I
B
= -15mA
I
C
= -500mA, I
B
= -50mA
V
CB
= -10V, I
E
= 0, f = 1.0MHz
I
C
= -50mA, V
CE
= -20V,
f = 100MHz
V
CC
= -30V, I
C
= -150mA,
I
B1
= -15mA
V
CC
= -6V, I
C
= -150mA,
I
B1
= I
B1
= -15mA
Min.
-60
-60
-5.0
Typ.
Max.
Units
V
V
V
nA
-10
75
100
100
100
50
300
-0.4
-1.6
-1.3
-2.6
8
V
V
V
V
pF
MHz
ns
ns
V
CE(sat)
V
BE(sat)
C
obo
f
T
t
ON
t
OFF
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Output Capacitance
Current Gain Bandwidth Product
Turn On Time
Turn Off Time
200
45
100
* DC Item are tested by Pulse Test: Pulse Width≤300us, Duty Cycle≤2%
©2006 Fairchild Semiconductor Corporation
1
www.fairchildsemi.com
KSP2907A Rev. D
KSP2907A PNP General Purpose Amplifier
Typical Characteristics
V
BE
(sat), V
CE
(sat)[V], SATURATION VOLTAGE
-10
1000
V
CE
= -10V
I
C
= 10 I
B
h
FE
, DC CURRENT GAIN
-1
V
BE
(sat)
100
-0.1
V
CE
(sat)
-0.01
-1
-10
-100
-1000
10
-1
-10
-100
-1000
I
C
[A], COLLECTOR CURRENT
I
C
[mA], COLLECTOR CURRENT
Figure 1. DC current Gain
Figure 2. Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
100
1000
I
E
= 0
f = 1MHz
f
T
[MHz],
CURRENT GAIN BANDWIDTH PRODUCT
V
CE
= -20V
C
ob
[pF], CAPACITANCE
10
100
1
0.1
-1
-10
-100
10
-1
-10
-100
-1000
V
CB
[V], COLLECTOR-BASE VOLTAGE
I
C
[mA], COLLECTOR CURRENT
Figure 3. Output Capacitance
Figure 4. Current Gain Bandwidth Product
2
KSP2907A Rev. D
www.fairchildsemi.com
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Advance Information
Product Status
Formative or In Design
Definition
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice to improve design.
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Preliminary
First Production
No Identification Needed
Full Production
Obsolete
Not In Production
Rev. I20
Embedded System
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