KTB1151Y datasheet, PDF - EEWORLD Datasheet

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KTB1151Y: DescriptionPower Bipolar Transistor, 5A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-126, Plastic/Epoxy, 3 Pin, TO-126, 3 PIN; CategoryDiscrete semiconductor The transistor; File Size395KB，3 Pages; ManufacturerKEC; Websitehttp://www.keccorp.com/

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KTB1151Y Overview

Power Bipolar Transistor, 5A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-126, Plastic/Epoxy, 3 Pin, TO-126, 3 PIN

KTB1151Y Parametric

Parameter Name	Attribute value
Maker	KEC
Parts packaging code	SIP
package instruction	TO-126, 3 PIN
Contacts	3
Reach Compliance Code	unknown
ECCN code	EAR99
Maximum collector current (IC)	5 A
Collector-emitter maximum voltage	60 V
Configuration	SINGLE
Minimum DC current gain (hFE)	200
JEDEC-95 code	TO-126
JESD-30 code	R-PSFM-T3
Number of components	1
Number of terminals	3
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Polarity/channel type	PNP
Maximum power dissipation(Abs)	20 W
surface mount	NO
Terminal form	THROUGH-HOLE
Terminal location	SINGLE
Transistor component materials	SILICON

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SEMICONDUCTOR

TECHNICAL DATA

LOW COLLECTOR SATURATION VOLTAGE

LARGE CURRENT

C

KTB1151

EPITAXIAL PLANAR PNP TRANSISTOR

A

B

D

E

F

FEATURES

High Power Dissipation : P

C

=1.5W(Ta=25 )

Complementary to KTD1691.

H

J

G

MAXIMUM RATING (Ta=25

CHARACTERISTIC

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

Base Current

Collector Power

Dissipation

Junction Temperature

Storage Temperature Range

* PW

10ms, Duty Cycle

50%

Ta=25

Tc=25

DC

Pulse *

)

SYMBOL

V

CBO

V

CEO

V

EBO

I

C

I

CP

I

B

P

C

T

j

T

stg

RATING

-60

-7

-5

-8

-1

1.5

20

150

-55 150

UNIT

V

A

W

N

K

L

M

O

1

2

3

P

1. EMITTER

2. COLLECTOR

3. BASE

DIM

A

B

C

D

E

F

G

H

J

K

L

M

N

O

P

MILLIMETERS

8.3 MAX

5.8

0.7

_

Φ3.2 +

0.1

3.5

_

11.0

+

0.3

2.9 MAX

1.0 MAX

1.9 MAX

_

0.75

+

0.15

_

15.50

+

0.5

_

2.3

+

0.1

_

0.65

+

0.15

1.6

3.4 MAX

TO-126

ELECTRICAL CHARACTERISTICS (Ta=25 )

CHARACTERISTIC

Collector Cut-off Current

Emitter Cut-off Current

SYMBOL

I

CBO

I

EBO

h

FE

1

DC Current Gain

*

h

FE

2 (Note)

h

FE

3

Collector-Emitter Saturation Voltage *

Base-Emitter Saturation Voltage

Turn On Time

Switching

Time

Storage Time

Fall Time

* Pulse test : PW

350 S, Duty Cycle 2% Pulse

O:160 320,

Y:200

400.

*

V

CE(sat)

V

BE(sat)

t

on

t

stg

t

f

0

I

B1

20µsec

-I

B1

=I

B2

=0.2A

DUTY CYCLE < 1%

=

V

CC

=-10V

TEST CONDITION

V

CB

=-50V, I

E

=0

V

EB

=-7V, I

C

=0

V

CE

=-1V, I

C

=-0.1A

V

CE

=-1V, I

C

=-2A

V

CE

=-2V, I

C

=-5A

I

C

=-2A, I

B

=-0.2A

I

C

=-2A, I

B

=-0.2A

OUTPUT

I

B2

INPUT

I

B1

5Ω

I

B2

MIN.

-

60

160

50

-

TYP.

-

-0.14

-0.9

0.15

0.78

0.18

MAX.

-10

-

400

-

-0.3

-1.2

1

2.5

1

UNIT

A

V

S

Note) h

FE

(2) Classification :

2003. 7. 24

Revision No : 2

1/3

KTB1151Y Related Products

	KTB1151Y	KTB1151-Y-U/PH	KTB1151O
Description	Power Bipolar Transistor, 5A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-126, Plastic/Epoxy, 3 Pin, TO-126, 3 PIN	Rated power: 1.5W Collector current Ic: 5A Collector-emitter breakdown voltage Vce: 60V Transistor type: PNP PNP Vceo=-60V Ic=-5A PC=1.5W	Power Bipolar Transistor, 5A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-126, Plastic/Epoxy, 3 Pin, TO-126, 3 PIN
Maker	KEC	-	KEC
Parts packaging code	SIP	-	SIP
package instruction	TO-126, 3 PIN	-	TO-126, 3 PIN
Contacts	3	-	3
Reach Compliance Code	unknown	-	unknown
ECCN code	EAR99	-	EAR99
Maximum collector current (IC)	5 A	-	5 A
Collector-emitter maximum voltage	60 V	-	60 V
Configuration	SINGLE	-	SINGLE
Minimum DC current gain (hFE)	200	-	160
JEDEC-95 code	TO-126	-	TO-126
JESD-30 code	R-PSFM-T3	-	R-PSFM-T3
Number of components	1	-	1
Number of terminals	3	-	3
Maximum operating temperature	150 °C	-	150 °C
Package body material	PLASTIC/EPOXY	-	PLASTIC/EPOXY
Package shape	RECTANGULAR	-	RECTANGULAR
Package form	FLANGE MOUNT	-	FLANGE MOUNT
Polarity/channel type	PNP	-	PNP
Maximum power dissipation(Abs)	20 W	-	20 W
surface mount	NO	-	NO
Terminal form	THROUGH-HOLE	-	THROUGH-HOLE
Terminal location	SINGLE	-	SINGLE
Transistor component materials	SILICON	-	SILICON

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