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BC846BS
65 V, 100 mA NPN/NPN general-purpose transistor
Rev. 01 — 24 August 2009
Product data sheet
1. Product profile
1.1 General description
NPN/NPN general-purpose transistor pair in a very small Surface-Mounted Device (SMD)
plastic package.
Table 1.
Product overview
Package
NXP
BC846BS
SOT363
JEITA
SC-88
PNP/PNP
complement
BC856BS
NPN/PNP
complement
BC846BPN
Type number
1.2 Features
I
I
I
I
I
I
Low collector capacitance
Low collector-emitter saturation voltage
Closely matched current gain
Reduces number of components and board space
No mutual interference between the transistors
AEC-Q101 qualified
1.3 Applications
I
General-purpose switching and amplification
1.4 Quick reference data
Table 2.
Symbol
V
CEO
I
C
h
FE
Quick reference data
Parameter
collector-emitter voltage
collector current
DC current gain
V
CE
= 5 V; I
C
= 2 mA
Conditions
open base
Min
-
-
200
Typ
-
-
300
Max
65
100
450
Unit
V
mA
Per transistor
NXP Semiconductors
BC846BS
65 V, 100 mA NPN/NPN general-purpose transistor
2. Pinning information
Table 3.
Pin
1
2
3
4
5
6
Pinning
Description
emitter TR1
base TR1
collector TR2
emitter TR2
base TR2
collector TR1
1
2
3
1
2
sym020
Simplified outline
6
5
4
Graphic symbol
6
5
4
TR2
TR1
3
3. Ordering information
Table 4.
Ordering information
Package
Name
BC846BS
SC-88
Description
plastic surface-mounted package; 6 leads
Version
SOT363
Type number
4. Marking
Table 5.
BC846BS
[1]
* = -: made in Hong Kong
* = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China
Marking codes
Marking code
[1]
*E5
Type number
5. Limiting values
Table 6.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
BM
P
tot
BC846BS_1
Parameter
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current
peak collector current
peak base current
total power dissipation
Conditions
open emitter
open base
open collector
single pulse;
t
p
≤
1 ms
single pulse;
t
p
≤
1 ms
T
amb
≤
25
°C
[1]
Min
-
-
-
-
-
-
-
Max
80
65
6
100
200
200
200
Unit
V
V
V
mA
mA
mA
mW
Per transistor
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 01 — 24 August 2009
2 of 12
NXP Semiconductors
BC846BS
65 V, 100 mA NPN/NPN general-purpose transistor
Table 6.
Limiting values
…continued
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Per device
P
tot
T
j
T
amb
T
stg
[1]
Parameter
total power dissipation
junction temperature
ambient temperature
storage temperature
Conditions
T
amb
≤
25
°C
[1]
Min
-
-
−55
−65
Max
300
150
+150
+150
Unit
mW
°C
°C
°C
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
500
P
tot
(mW)
400
006aab618
300
200
100
0
−75
−25
25
75
125
175
T
amb
(°C)
FR4 PCB, standard footprint
Fig 1.
Per device: Power derating curve SOT363 (SC-88)
6. Thermal characteristics
Table 7.
Symbol
R
th(j-a)
R
th(j-sp)
Per device
R
th(j-a)
[1]
Thermal characteristics
Parameter
thermal resistance from
junction to ambient
thermal resistance from
junction to solder point
thermal resistance from
junction to ambient
in free air
[1]
Conditions
in free air
[1]
Min
-
-
Typ
-
-
Max
625
230
Unit
K/W
K/W
Per transistor
-
-
416
K/W
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
BC846BS_1
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 01 — 24 August 2009
3 of 12
NXP Semiconductors
BC846BS
65 V, 100 mA NPN/NPN general-purpose transistor
10
3
Z
th(j-a)
(K/W)
10
2
δ
=1
0.75
0.50
0.33
0.20
0.10
0.05
0.02
10
0.01
0
006aab619
1
10
−5
10
−4
10
−3
10
−2
10
−1
1
10
10
2
t
p
(s)
10
3
FR4 PCB, standard footprint
Fig 2.
Per transistor: Transient thermal impedance from junction to ambient as a function of pulse duration;
typical values
7. Characteristics
Table 8.
Characteristics
T
amb
= 25
°
C unless otherwise specified.
Symbol Parameter
Per transistor
I
CBO
collector-base cut-off V
CB
= 50 V; I
E
= 0 A
current
V
CB
= 30 V; I
E
= 0 A;
T
j
= 150
°C
emitter-base cut-off
current
DC current gain
V
EB
= 6 V; I
C
= 0 A
V
CE
= 5 V
I
C
= 10
µA
I
C
= 2 mA
V
CEsat
V
BEsat
V
BE
collector-emitter
saturation voltage
base-emitter
saturation voltage
I
C
= 10 mA; I
B
= 0.5 mA
I
C
= 100 mA; I
B
= 5 mA
I
C
= 10 mA; I
B
= 0.5 mA
I
C
= 100 mA; I
B
= 5 mA
I
C
= 2 mA
I
C
= 10 mA
-
200
-
-
-
-
580
-
280
300
55
200
755
1000
650
-
-
450
100
300
850
-
700
770
mV
mV
mV
mV
mV
mV
-
-
-
-
-
-
15
5
100
nA
µA
nA
Conditions
Min
Typ
Max
Unit
I
EBO
h
FE
base-emitter voltage V
CE
= 5 V
BC846BS_1
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 01 — 24 August 2009
4 of 12
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