SEMICONDUCTOR
TECHNICAL DATA
GENERAL PURPOSE APPLICATION.
A
KTC2026
EPITAXIAL PLANAR NPN TRANSISTOR
C
・Low
Collector Saturation Voltage
: V
CE(sat)
=1.0V(Max.) at I
C
=2A, I
B
=0.2A.
・Complementary
to KTA1046.
・Suffix
U : Qualified to AEC-Q101.
ex) KTC2026-U/PU
E
G
B
P
FEATURES
S
DIM
A
B
C
D
E
F
G
H
J
K
L
M
N
P
Q
R
S
K
L
M
D
L
R
D
℃
MAXIMUM RATING (Ta=25℃)
CHARACTERISTIC
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
Collector Power
Dissipation
Junction Temperature
Storage Temperature Range
Ta=25℃
Tc=25℃
T
j
T
stg
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
RATING
60
60
7
3
0.5
2
W
20
150
-55½150
℃
℃
UNIT
V
V
V
A
A
1
N
N
MILLIMETERS
_
10.0 + 0.3
_
15.0 + 0.3
_
2.70 + 0.3
0.76+0.09/-0.05
_
Φ3.2
+ 0.2
_
3.0 + 0.3
_
12.0 + 0.3
0.5+0.1/-0.05
_
13.6 + 0.5
_
3.7 + 0.2
1.2+0.25/-0.1
1.5+0.25/-0.1
_
2.54 + 0.1
_
6.8 + 0.1
_
4.5 + 0.2
_
2.6 + 0.2
0.5 Typ
F
J
H
2
3
Q
1. BASE
2. COLLECTOR
3. EMITTER
TO-220IS
℃
ELECTRICAL CHARACTERISTICS (Ta=25℃)
CHARACTERISTIC
Collector Cut-off Current
Emitter Cut-off Current
Collector-Emitter Breakdown Voltage
DC Current Gain
Collector Emitter Saturation Voltage
Base-Emitter Voltage
Transition Frequency
Collector Output Capacitance
Turn-on Time
Switching Time
Storage Time
Fall Time
Note : h
FE
Classification
2018. 04. 10
Y:100½200,
SYMBOL
I
CBO
I
EBO
V
(BR)CEO
h
FE
(Note)
V
CE(sat)
V
BE
f
T
C
ob
t
on
t
stg
t
f
GR:150½300
I
B1
TEST CONDITION
V
CB
=60V, I
E
=0
V
EB
=7V, I
C
=0
I
C
=50mA, I
B
=0
V
CE
=5V, I
C
=0.5A
I
C
=2A, I
B
=0.2A
V
CE
=5V, I
C
=0.5A
V
CE
=5V, I
C
=0.5A
V
CB
=10V, I
E
=0, f=1MHz
20μsec
INPUT
I
B2
I
B1
=-I
B2
=0.2A
DUTY CYCLE < 1%
=
OUTPUT
I
B1
I
B2
15Ω
MIN.
-
-
60
100
-
-
-
-
-
-
-
TYP.
-
-
-
-
0.25
0.7
30
35
0.65
1.3
0.65
MAX.
1
1
-
300
1.0
1.0
-
-
-
-
-
UNIT
μ
A
μ
A
V
V
V
MHz
pF
μ
S
V
CC
=30V
Revision No : 6
1/2
KTC2026
I
C
3.0
COLLECTOR CURRENT I
C
(A)
2.5
2.0
1.5
1.0
0.5
0
I
B
=10mA
90
80
70
- V
CE
60
50
40
30
20
Pc - Ta
COLLECTOR POWER DISSIPATION P
C
(W)
40
35
30
25
20
15
10
5
0
0
1
2
3
4
5
6
7
8
1 Tc=Ta
INFINITE HEAT SINK
2 300x300x2mm Al
HEAT SINK
3 200x200x2mm Al
HEAT SINK
4 100x100x1mm Al
HEAT SINK
5 100x100x1mm Fe
HEAT SINK
6 50x50x1mm Al
HEAT SINK
7 50x50x1mm Fe
HEAT SINK
8 NO HEAT
SINK
0
COMMON EMITTER
Tc=25 C
0
1
2
3
4
5
6
7
8
COLLECTOR-EMITTER VOLTAGE V
CE
(V)
25
50
75
100
125
150
175
200
AMBIENT TEMPERATURE Ta ( C)
h
FE
- I
C
300
COLLECTOR CURRENT I
C
(A)
DC CURRENT GAIN h
FE
Tc=100 C
C
Tc=25
C
Tc=-25
SAFE OPERATING AREA
10
5
3
I
C
MAX.(PULSED)*
I
C
MAX.
(CONTINUOUS)
DC
S*
1m
mS*
10
100
50
30
ER
OP
10
S*
0m
N
IO
AT
1
0.5
0.3
10
0.02
0.05 0.1
0.3
1
3
10
0.1
1
COLLECTOR CURRENT I
C
(A)
CURVES MUST BE DERATED
LINEARLY WITH INCREASE
IN TEMPERATURE
3
5
10
30
50
COLLECTOR-EMITTER VOLTAGE V
CE
(V)
V
CE(sat)
- I
C
COLLECTOR-EMITTER SATURATION
VOLTAGE V
CE(sat)
(V)
1
0.5
0.3
COMMON EMITTER
I
C
/I
B
=10
0.1
0.05
0.03
0.02
0.05
0.1
100
Tc=
C
Tc=25 C
Tc=-25 C
0.3
1
3
5
10
COLLECTOR CURRENT I
C
(A)
2018. 04. 10
Revision No : 6
V
CEO
MAX.
COMMON EMITTER
V
CE
=5V
* SINGLE NONREPETITIVE
PULSE Tc=25 C
100
2/2
51mcu
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