KTC2025L-GR datasheet, PDF - EEWORLD Datasheet

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KTC2025L-GR: DescriptionSmall Signal Bipolar Transistor, 1A I(C), 120V V(BR)CEO, 1-Element, NPN, Silicon, IPAK-3; CategoryDiscrete semiconductor The transistor; File Size399KB，2 Pages; ManufacturerKEC; Websitehttp://www.keccorp.com/

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KTC2025L-GR Overview

Small Signal Bipolar Transistor, 1A I(C), 120V V(BR)CEO, 1-Element, NPN, Silicon, IPAK-3

KTC2025L-GR Parametric

Parameter Name	Attribute value
Maker	KEC
package instruction	IN-LINE, R-PSIP-T3
Contacts	3
Reach Compliance Code	unknown
ECCN code	EAR99
Maximum collector current (IC)	1 A
Collector-emitter maximum voltage	120 V
Configuration	SINGLE
Minimum DC current gain (hFE)	160
JESD-30 code	R-PSIP-T3
Number of components	1
Number of terminals	3
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	IN-LINE
Polarity/channel type	NPN
Maximum power dissipation(Abs)	8 W
Certification status	Not Qualified
surface mount	NO
Terminal form	THROUGH-HOLE
Terminal location	SINGLE
transistor applications	SWITCHING
Transistor component materials	SILICON
Nominal transition frequency (fT)	130 MHz

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SEMICONDUCTOR

TECHNICAL DATA

LOW FREQUENCY POWER AMP,

MEDIUM SPEED SWITCHING APPLICATIONS

A

KTC2025D/L

EPITAXIAL PLANAR NPN TRANSISTOR

I

J

High breakdown voltage V

CEO

120V, high current 1A.

Low saturation voltage and good linearity of h

FE

.

Complementary to KTA1045D/L

Q

K

B

M

E

D

FEATURES

C

H

F

1

2

F

3

P

L

DIM

A

B

C

D

E

F

H

I

J

K

L

M

O

P

Q

MILLIMETERS

_

6.60 + 0.2

_

6.10 + 0.2

_

5.0 + 0.2

_

1.10 + 0.2

_

2.70 + 0.2

_

2.30 + 0.1

1.00 MAX

_

2.30 + 0.2

_

0.5 + 0.1

_

2.00 + 0.20

_

0.50 + 0.10

_

0.91+ 0.10

_

0.90 + 0.1

_

1.00 + 0.10

0.95 MAX

MAXIMUM RATING (Ta=25

CHARACTERISTIC

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

Collector Power

Dissipation

Junction Temperature

Storage Temperature Range

Ta=25

Tc=25

)

SYMBOL

V

CBO

V

CEO

V

EBO

I

C

I

CP

P

C

T

j

T

stg

RATING

120

5

1

2

1.0

8

150

-55 150

UNIT

V

A

1. BASE

2. COLLECTOR

3. EMITTER

DPAK

A

C

I

J

D

O

W

H

G

P

F

L

1

2

3

DIM

A

B

C

D

E

F

G

H

I

J

K

L

P

Q

MILLIMETERS

_

6.60

+

0.2

_

6.10

+

0.2

_

5.0

+

0.2

_

1.10

+

0.2

_

9.50

+

0.6

_

2.30

+

0.1

_

0.76

+

0.1

1.0 MAX

_

2.30

+

0.2

_

0.5

+

0.1

_

2.0

+

0.2

_

0.50

+

0.1

_

1.0

+

0.1

0.90 MAX

Q

K

1. BASE

2. COLLECTOR

3. EMITTER

E

B

ELECTRICAL CHARACTERISTICS (Ta=25

CHARACTERISTIC

Collector Cut of Current

Emitter Cut of Current

Collector-Base Breakdown Voltage

Collector-Emitter Breakdown Voltage

Emitter-Base Breakdown Voltage

DC Current Gain

Gain Bandwidth Product

Output Capacitance

Collector-Emitter Saturation Voltage

Base-Emitter Saturation Voltage

Turn-on Time

Switching Time

Turn-off Time

Storage Time

(Note) : h

FE

(1) Classification

)

TEST CONDITION

V

CB

=50V, I

E

=0

V

EB

=4V, I

C

=0

I

C

=10 A, I

E

=0

I

C

=1mA, I

B

=0

I

E

=10 A, I

C

=0

V

CE

=5V, I

C

=50mA

V

CE

=5V, I

C

=500mA

V

CE

=10V, I

C

=50mA

V

CB

=10V, I

E

=0, f=1MHz

I

C

=500mA, I

B

=50mA

I

C

=500mA, I

B

=50mA

1

20u sec

100Ω

1uF

12V

1Ω

I

B1

I

B2

24Ω

IPAK

SYMBOL

I

CBO

I

EBO

V

(BR)CBO

V

(BR)CEO

V

(BR)EBO

h

FE

(1) Note

h

FE

(2)

f

T

C

ob

V

CE(sat)

V

BE(sat)

t

on

t

off

t

stg

MIN.

-

120

5

100

20

-

TYP.

-

130

20

0.15

0.85

100

500

700

MAX.

1

-

320

-

0.4

1.2

-

UNIT

A

V

MHz

pF

V

nS

-2V

V

CE

=12V

I

C

=10I

B1

=-10I

B2

=500mA

Y:100 200, GR:160 320

2003. 3. 27

Revision No : 3

1/2

KTC2025L-GR Related Products

	KTC2025L-GR	KTC2025L-Y	KTC2025D-Y	KTC2025D-GR
Description	Small Signal Bipolar Transistor, 1A I(C), 120V V(BR)CEO, 1-Element, NPN, Silicon, IPAK-3	Small Signal Bipolar Transistor, 1A I(C), 120V V(BR)CEO, 1-Element, NPN, Silicon, IPAK-3	Small Signal Bipolar Transistor, 1A I(C), 120V V(BR)CEO, 1-Element, NPN, Silicon, DPAK-3	Small Signal Bipolar Transistor, 1A I(C), 120V V(BR)CEO, 1-Element, NPN, Silicon, DPAK-3
Maker	KEC	KEC	KEC	KEC
package instruction	IN-LINE, R-PSIP-T3	IN-LINE, R-PSIP-T3	SMALL OUTLINE, R-PSSO-G2	SMALL OUTLINE, R-PSSO-G2
Contacts	3	3	3	3
Reach Compliance Code	unknown	unknown	unknown	unknown
ECCN code	EAR99	EAR99	EAR99	EAR99
Maximum collector current (IC)	1 A	1 A	1 A	1 A
Collector-emitter maximum voltage	120 V	120 V	120 V	120 V
Configuration	SINGLE	SINGLE	SINGLE	SINGLE
Minimum DC current gain (hFE)	160	100	100	160
JESD-30 code	R-PSIP-T3	R-PSIP-T3	R-PSSO-G2	R-PSSO-G2
Number of components	1	1	1	1
Number of terminals	3	3	2	2
Maximum operating temperature	150 °C	150 °C	150 °C	150 °C
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	IN-LINE	IN-LINE	SMALL OUTLINE	SMALL OUTLINE
Polarity/channel type	NPN	NPN	NPN	NPN
Maximum power dissipation(Abs)	8 W	8 W	8 W	8 W
surface mount	NO	NO	YES	YES
Terminal form	THROUGH-HOLE	THROUGH-HOLE	GULL WING	GULL WING
Terminal location	SINGLE	SINGLE	SINGLE	SINGLE
transistor applications	SWITCHING	SWITCHING	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON	SILICON	SILICON
Nominal transition frequency (fT)	130 MHz	130 MHz	130 MHz	130 MHz

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