KTD1347A datasheet, PDF - EEWORLD Datasheet

EEWORLDEEWORLD

Datasheet

Datasheet> All Categories > Discrete semiconductor> The transistor> KTD1347A

Preview

KTD1347A: DescriptionSmall Signal Bipolar Transistor, 3A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, TO-92L, 3 PIN; CategoryDiscrete semiconductor The transistor; File Size86KB，3 Pages; ManufacturerKEC; Websitehttp://www.keccorp.com/

Download Datasheet Parametric Compare View All

KTD1347A Overview

Small Signal Bipolar Transistor, 3A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, TO-92L, 3 PIN

KTD1347A Parametric

Parameter Name	Attribute value
Maker	KEC
Parts packaging code	TO-92
package instruction	CYLINDRICAL, R-PBCY-T3
Contacts	3
Reach Compliance Code	unknown
ECCN code	EAR99
Maximum collector current (IC)	3 A
Collector-emitter maximum voltage	50 V
Configuration	SINGLE
Minimum DC current gain (hFE)	100
JEDEC-95 code	TO-92
JESD-30 code	R-PBCY-T3
Number of components	1
Number of terminals	3
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	CYLINDRICAL
Polarity/channel type	NPN
Maximum power dissipation(Abs)	1 W
surface mount	NO
Terminal form	THROUGH-HOLE
Terminal location	BOTTOM
transistor applications	SWITCHING
Transistor component materials	SILICON
Nominal transition frequency (fT)	150 MHz

Preview

Download Datasheet

View All

SEMICONDUCTOR

TECHNICAL DATA

VOLTAGE REGULATORS, RELAY DRIVERS

LAMP DRIVERS, ELECTRICAL EQUIPMENT

FEATURES

Low collector-to-emitter saturation voltage.

Fast switching speed.

Large current capacity and wide ASO.

Complementary to KTB985.

F

H

C

KTD1347

EPITAXIAL PLANAR NPN TRANSISTOR

B

D

A

Adoption of MBIT processes.

P

DEPTH:0.2

S

Q

K

DIM

A

B

C

D

E

F

G

H

J

K

L

M

N

O

P

Q

R

S

MILLIMETERS

7.20 MAX

5.20 MAX

0.60 MAX

2.50 MAX

1.15 MAX

1.27

1.70 MAX

0.55 MAX

_

14.00 + 0.50

0.35 MIN

_

0.75 + 0.10

4

G

J

F

H

M

E

M

L

R

H

MAXIMUM RATING (Ta=25

CHARACTERISTIC

Collector-Base Voltage

Vollector-Emitter Voltage

Emitter-Base Voltage

Collector Current

Collector Current (Pulse)

Collector Power Dissipation

Junction Temperature

Storage Temperature Range

)

V

CBO

V

CEO

V

EBO

I

C

I

CP

P

C

T

j

T

stg

60

50

6

3

6

1

150

-55

150

V

A

W

O

SYMBOL

RATING

UNIT

1

N

2

3

N

H

1. EMITTER

2. COLLECTOR

3. BASE

25

1.25

Φ1.50

0.10 MAX

_

12.50 + 0.50

1.00

TO-92L

ELECTRICAL CHARACTERISTICS (Ta=25 )

CHARACTERISTIC

Collector Cut-off Current

Emitter Cut-off Current

DC Current Gain

Collector-Emitter Saturation Voltage

Base-Emitter Saturation Voltage

Transition Frequency

Collector Output Capacitance

Turn-on Time

Switching

Time

Storage Time

Fall Time

SYMBOL

I

CBO

I

EBO

h

FE

(1) (Note)

h

FE

(2)

V

CE(sat)

V

BE(sat)

f

T

C

ob

t

on

t

stg

t

f

TEST CONDITION

V

CB

=40V, I

E

=0

V

EB

=4V, I

C

=0

V

CE

=2V, I

C

=100

V

CE

=2V, I

C

=3A

I

C

=2A, I

B

=100

I

C

=2A, I

B

=100

V

CE

=10V, I

C

=50

V

CB

=10V, I

E

=0, f=1

PW=20µs

DC < 1%

=

INPUT

I

B1

R8

I

B2

25

MIN.

-

100

35

-

D

TYP.

-

0.19

0.94

150

25

70

650

35

MAX.

1

400

-

0.5

1.2

-

UNIT.

V

VR

50

nS

100µ

-5V

10I

B

1=-10I

B2

=I

C

=1A

470µ

25V

-

Note : h

FE

(1) Classification A:100 200, B:140 280, C:200

400

1999. 11. 30

Revision No : 1

1/3

KTD1347A Related Products

	KTD1347A	KTD1347B	KTD1347C
Description	Small Signal Bipolar Transistor, 3A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, TO-92L, 3 PIN	Small Signal Bipolar Transistor, 3A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, TO-92L, 3 PIN	Small Signal Bipolar Transistor, 3A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, TO-92L, 3 PIN
Maker	KEC	KEC	KEC
Parts packaging code	TO-92	TO-92	TO-92
package instruction	CYLINDRICAL, R-PBCY-T3	CYLINDRICAL, R-PBCY-T3	CYLINDRICAL, R-PBCY-T3
Contacts	3	3	3
Reach Compliance Code	unknown	unknown	unknown
ECCN code	EAR99	EAR99	EAR99
Maximum collector current (IC)	3 A	3 A	3 A
Collector-emitter maximum voltage	50 V	50 V	50 V
Configuration	SINGLE	SINGLE	SINGLE
Minimum DC current gain (hFE)	100	140	200
JEDEC-95 code	TO-92	TO-92	TO-92
JESD-30 code	R-PBCY-T3	R-PBCY-T3	R-PBCY-T3
Number of components	1	1	1
Number of terminals	3	3	3
Maximum operating temperature	150 °C	150 °C	150 °C
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL
Polarity/channel type	NPN	NPN	NPN
Maximum power dissipation(Abs)	1 W	1 W	1 W
surface mount	NO	NO	NO
Terminal form	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE
Terminal location	BOTTOM	BOTTOM	BOTTOM
transistor applications	SWITCHING	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON	SILICON
Nominal transition frequency (fT)	150 MHz	150 MHz	150 MHz

Recommended Resources

SHD102 single feed water pump water level automatic control auto-coupling voltage reduction closed starting circuit a

Automatic lighting controlled by telephone signal

Adopts high-speed binary parallel adder circuit using ALU

Using HA1451 as a dual-channel preamplifier

555 electronic timing, hypnosis, massager circuit

±15V dual tracking regulated power supply

Shortcut: A0 A1 A2 A3 A4 A5 A6 A7 A8 A9 AA AB AC AD AE AF AG AH AI AJ AK AL AM AN AO AP AQ AR AS AT AU AV AW AX AY AZ B0 B1 B2 B3 B4 B5 B6 B7 B8 B9 BA BB BC BD BE BF BG BH BI BJ BK BL BM BN BO BP BQ BR BS BT BU BV BW BX BY BZ C0 C1 C2 C3 C4 C5 C6 C7 C8 C9 CA CB CC CD CE CF CG CH CI CJ CK CL CM CN CO CP CQ CR CS CT CU CV CW CX CY CZ D0 D1 D2 D3 D4 D5 D6 D7 D8 D9 DA DB DC DD DE DF DG DH DI DJ DK DL DM DN DO DP DQ DR DS DT DU DV DW DX DZ

Popular Components