SEMICONDUCTOR
TECHNICAL DATA
CONDENSER MICROPHONE APPLICATION.
FEATURES
Especially Suited for Use in Audio, Telephone.
Capacitor Microphones.
Excellent Voltage Characteristics.
Excellent Transient Characteristics.
F
G
KTK597TV
N CHANNEL JUNCTION FIELD
EFFECT TRANSISTOR
E
B
2
D
A
1
3
MAXIMUM RATING (Ta=25
CHARACTERISTIC
Gate-Drain Voltage
Gate Current
Drain Current
Drain Power Dissipation
Junction Temperature
Storage Temperature Range
)
SYMBOL
V
GDO
I
G
I
D
P
D
T
j
T
stg
RATING
-20
10
1
100
150
-55 150
UNIT
V
mA
mA
mW
C
J
J
DIM MILLIMETERS
_
1.2 +0.05
A
_
0.8 +0.05
B
_
C
0.32 + 0.05
_
D
0.3 + 0.05
_
E
1.2 + 0.05
_
0.8 + 0.05
F
0.40
G
_
0.11 + 0.05
H
_
0.2 + 0.05
I
5
J
I
1. Source
2. Drain
3. Gate
TVSM
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
Gate-Drain Breakdown Voltage
Gate-Source Cut-off Voltage
Drain Current
Foward Transfer Admittance
Input Capacitance
Reverse Transfer Capacitance
Note : I
DSS
Classification
Y(1):150~240,
SYMBOL
V
(BR)GDO
V
GS(OFF)
I
DSS
(Note)
| y
fs
|
C
iss
C
rss
GR(2):210~350
TEST CONDITION
I
G
=-100 A
V
DS
=5V, I
D
=1 A
V
DS
=5V, V
GS
=0
V
DS
=5V, V
GS
=0, f=1kHz
V
DS
=5V, V
GS
=0, f=1MHz
V
DS
=5V, V
GS
=0, f=1MHz
MIN.
-20
-
150
0.4
-
-
TYP.
-
-0.6
-
1.2
3.5
0.65
MAX.
-
-1.5
350
-
-
-
UNIT
V
V
A
mS
pF
pF
Marking
I
DSS
Rank
Type Name
F
2006. 2. 3
Revision No : 0
1/5
KTK597TV
ELECTRICAL CHARACTERISTICS
(Ta=25 , V
CC
=4.5V, R
L
=1k , C
in
=15pF, See Specified Test Circuit.)
CHARACTERISTIC
Voltage Gain
Reduced Voltage Characteristic
Frequency Characteristic
Input Resistance
Output Resistance
Total Harmonic Distortion
Output Noise Voltage
SYMBOL
G
V
G
VV
G
VF
Z
in
Z
O
THD
V
NO
TEST CONDITION
V
in
=10mV, f=1kHz
V
in
=10mV, f=1kHz V
CC
=4.5V 1.5V
f=1kHz 110Hz
f=1kHz
f=1kHz
V
in
=30mV, f=1kHz
V
in
=0, A curve
MIN.
-
-
-
25
-
-
-
TYP.
-3.0
-1.2
-
-
-
1.0
-
-110
MAX.
-
-4.0
-1.0
-
700
%
dB
UNIT
dB
dB
dB
M
SPECIFIED TEST CIRCUIT
Voltage gain.
Frequency Characteristic.
Distortion.
Reduced Voltage Characteristic.
1kΩ
33uF
15pF
V
CC
=4.5V
V
CC
=1.5V
A
B
OSC
VTVM
V
THD
1kΩ
For Output
Impedance
2006. 2. 3
Revision No : 0
2/5
KTK597TV
I
D
- V
DS
300
I
DSS
=200µA
I
D
- V
GS
350
V
DS
=5V
V
GS
=0
DRAIN CURRENT I
D
(µA)
250
200
150
100
V
GS
=-0.2V
V
GS
=-0.1V
DRAIN CURRENT I
D
(µA)
300
250
200
150
100
50
0
I
D
SS
A
0
µ
30
=
SS
µ
A
70
=1
50
0
0
1
2
3
4
I
D
V
GS
=-0.4V
V
GS
=-0.3V
5
6
7
8
9
10
-0.7
-0.6
-0.5
-0.4
-0.3
-0.2
-0.1
0
DRAIN-SOURCE VOLTAGE V
DS
(V)
GATE-SOURCE VOLTAGE V
GS
(V)
y
fs
FORWARD TRANSFER ADMITTANCE
y
fs
(mS)
3
- I
DSS
CURRENT VOLTAGE V
GS(off)
(V)
V
DS
=5V
V
GS
=0V
f=1kHz
V
GS(off)
- I
DSS
-1
V
DS
=5V
I
D
=1µA
-0.5
-0.3
1
0.5
0.3
100
200
300
400
500
DRAIN CURRENT I
DSS
(µA)
-0.1
100
200
300
400
500
DRAIN CURRENT I
DSS
(µA)
10
INPUT CAPACITANCE C
iss
(pF)
V
GS
=0
f=1MHz
REVERSE TRANSFER CAPACITANCE C
rss
(pF)
C
iss
- V
DS
C
rss
- V
DS
3
V
GS
=0
f=1MHz
5
3
1
0.5
0.3
1
3
5
10
20
DRAIN-SOURCE VOLTAGE V
DS
(V)
1
1
3
5
10
20
DRAIN-SOURCE VOLTAGE V
DS
(V)
2006. 2. 3
Revision No : 0
3/5
KTK597TV
G
V
- I
DSS
2
VOLTAGE GAIN G
V
(dB)
0
-2
-4
-6
-8
-10
100
200
300
400
500
G
V
: V
CC
=4.5V
V
in
=10mV
R
L
=1.0kΩ
f=1kHz
I
DSS
: V
DS
=5.0V
G
VV
- I
DSS
REDUCED VOLTAGE CHARACTERISIC
G
VV
(dB)
2
0
-2
G
VV
: V
CC
=4.5V
V
in
=10mV
f=1kHz
I
DSS
: V
DS
=5.0V
1.5V
-4
-6
100
200
300
400
500
DRAIN CURRENT I
DSS
(µA)
DRAIN CURRENT I
DSS
(µA)
TOTAL HARMONIC DISTORTION THD (%)
THD - I
DSS
5
INPUT RESISTANCE Z
IN
(MΩ)
THD : V
CC
=4.5V
Z
IN
- I
DSS
36
Z
IN
: V
CC
=4.5V
3
V
in
=30mV
f=1kHz
I
DSS
: V
DS
=5.0V
34
32
30
28
26
V
in
=10mV
f=1kHz
I
DSS
: V
DS
=5.0V
1
0.5
0.3
100
200
300
400
500
100
200
300
400
500
DRAIN CURRENT I
DSS
(µA)
DRAIN CURRENT I
DSS
(µA)
Z
O
- I
DSS
700
OUTPUT RESISTANCE Z
O
(Ω)
Z
O
: V
CC
=4.5V
V
in
=10mV
f=1kHz
I
DSS
: V
DS
=5.0V
V
NO
- I
DSS
OUTPUT NOISE VOLTAGE V
NO
(dB)
-112
V
NO
: V
CC
=4.5V
V
in
=0, A curve
R
L
=1.0kΩ
I
DSS
: V
DS
=5.0V
600
-114
500
-116
400
-118
300
100
200
300
400
500
-120
100
200
300
400
500
DRAIN CURRENT I
DSS
(µA)
DRAIN CURRENT I
DSS
(µA)
2006. 2. 3
Revision No : 0
4/5
KTK597TV
TOTAL HARMONIC DISTORTION THD (%)
THD - V
IN
30
THD : V
CC
=4.5V
f=1kHz
I
DSS
: V
DS
=5.0V
P
D
- Ta
DRAIN POWER DISSIPATION P
D
(mW)
175
150
120
100
75
50
25
0
0
25
50
75
100
125
150
175
AMBIENT TEMPERATURE Ta ( C)
10
5
3
=
I
DSS
170
µ
A
I
DSS
=3
A
00
µ
1
0.5
0
40
80
120
160
200
INPUT VOLTAGE V
IN
(mV)
2006. 2. 3
Revision No : 0
5/5
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