KSD1588
KSD1588
Low Frequency Power Amplifier
• Low Speed Switching
• Complement to KSB1097
1
TO-220F
2.Collector
3.Emitter
1.Base
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
C
=25°C unless otherwise noted
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
I
B
P
C
P
C
T
J
T
STG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
*Collector Current (Pulse)
Base Current
Collector Dissipation (T
a
=25°C)
Collector Dissipation (T
C
=25°C)
Junction Temperature
Storage Temperature
Parameter
Value
100
60
7
7
15
3.5
2
30
150
-55 ~ 150
Units
V
V
V
A
A
A
W
W
°C
°C
* PW≤300µs, Duty Cycle≤10%
Electrical Characteristics
T
C
=25°C unless otherwise noted
Symbol
I
CBO
I
EBO
h
FE1
h
FE2
V
CE
(sat)
V
BE
(sat)
Parameter
Collector Cut-off Current
Emitter Cut-off Current
*DC Current Gain
*Collector-Emitter Saturation Voltage
*Base-Emitter Saturation Voltage
Test Condition
V
CB
= 80V, I
E
= 0
V
EB
= 5V, I
C
= 0
V
CE
= 1V, I
C
= 3A
V
CE
= 1V, I
C
= 5A
I
C
= 5A, I
B
= 0.5A
I
C
= 5A, I
B
= 0.5A
40
20
Min.
Max.
10
10
200
0.5
1.5
V
V
Units
µA
µA
* Pulse Test: PW≤350µs, Duty Cycle≤2%
h
FE1
Classification
Classification
h
FE1
R
40 ~ 80
O
80 ~ 120
Y
100 ~ 200
©2000 Fairchild Semiconductor International
Rev. A, February 2000
KSD1588
Typical Characteristics
1.0
0.9
I
B
= 18mA
I
B
= 16mA
I
B
= 14mA
I
B
= 12mA
I
B
= 10mA
I
B
= 8mA
I
B
= 6mA
1000
V
CE
= 1V
I
C
[A], COLLECTOR CURRENT
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
h
FE
, DC CURRENT GAIN
I
B
= 0
100
10
I
B
= 4mA
I
B
= 2mA
0
5
10
15
20
25
30
35
40
45
50
1
0.001
0.01
0.1
1
10
V
CE
[V], COLLECTOR-EMITTER VOLTAGE
I
C
[A], COLLECTOR CURRENT
Figure 1. Static Characteristic
Figure 2. DC current Gain
V
BE
(sat), V
CE
(sat)[V], SATURATION VOLTAGE
10
100
Ic = 10 I
B
I
C
[A], COLLECTOR CURRENT
50
10
10
30
uS
1
V
BE
(sat)
0u
S
0u
S
S
s
S
1m
0 m
0m
1
10
1
0.1
0.1
V
CE
(sat)
0.01
0.001
0.01
0.01
0.1
1
10
1
10
100
1000
I
C
[A], COLLECTOR CURRENT
V
CE
[V], COLLECTOR-EMITTER VOLTAGE
Figure 3. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
Figure 4. Safe OPerating Area
160
40
140
35
120
P
C
[W], POWER DISSIPATION
150
175
200
30
dT[%], Ic DERATING
100
25
80
s/b
DI
20
LIM
60
ITE
D
TI
O
SS
IP
A
15
40
N
10
LI
20
M
IT
ED
5
0
0
25
50
o
0
75
100
125
25
50
o
75
100
125
150
175
T
C
[ C], CASE TEMPERATURE
T
C
[ C], CASE TEMPERATURE
Figure 5. Derating Curve Safe Operating Area
Figure 6. Power Derating
©2000 Fairchild Semiconductor International
Rev. A, February 2000
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The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
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E
2
CMOS™
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®
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DISCLAIMER
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ISOPLANAR™
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POP™
PowerTrench
®
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SuperSOT™-3
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SyncFET™
TinyLogic™
UHC™
VCX™
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PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY
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LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR
INTERNATIONAL.
As used herein:
1. Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body,
or (b) support or sustain life, or (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
result in significant injury to the user.
2. A critical component is any component of a life support
device or system whose failure to perform can be
reasonably expected to cause the failure of the life support
device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Advance Information
Product Status
Formative or In
Design
First Production
Definition
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Preliminary
No Identification Needed
Full Production
Obsolete
Not In Production
©2000 Fairchild Semiconductor International
Rev. E
Embedded System
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