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BUV47A

Description
Power Bipolar Transistor, 9A I(C), 450V V(BR)CEO, 1-Element, NPN, Silicon, TO-218, Plastic/Epoxy, 3 Pin
CategoryDiscrete semiconductor    The transistor   
File Size339KB,9 Pages
ManufacturerMotorola ( NXP )
Websitehttps://www.nxp.com
Download Datasheet Parametric View All

BUV47A Overview

Power Bipolar Transistor, 9A I(C), 450V V(BR)CEO, 1-Element, NPN, Silicon, TO-218, Plastic/Epoxy, 3 Pin

BUV47A Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerMotorola ( NXP )
Reach Compliance Codeunknown
Shell connectionCOLLECTOR
Maximum collector current (IC)9 A
Collector-emitter maximum voltage450 V
ConfigurationSINGLE
Minimum DC current gain (hFE)7
JEDEC-95 codeTO-218
JESD-30 codeR-PSFM-T3
JESD-609 codee0
Number of components1
Number of terminals3
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeNPN
Maximum power consumption environment128 W
Certification statusNot Qualified
surface mountNO
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
Maximum off time (toff)2400 ns
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