BUR12 datasheet, PDF - EEWORLD Datasheet

BUR12: DescriptionPower Bipolar Transistor, 10A I(C), 120V V(BR)CEO, 1-Element, NPN, Silicon, Metal, 3 Pin, TO-59, 3 PIN; CategoryDiscrete semiconductor The transistor; File Size52KB，1 Pages; ManufacturerTT Electronics plc; Websitehttp://www.ttelectronics.com/

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BUR12 Overview

Power Bipolar Transistor, 10A I(C), 120V V(BR)CEO, 1-Element, NPN, Silicon, Metal, 3 Pin, TO-59, 3 PIN

Parameter Name	Attribute value
Maker	TT Electronics plc
package instruction	TO-59, 3 PIN
Reach Compliance Code	compliant
ECCN code	EAR99
Maximum collector current (IC)	10 A
Collector-emitter maximum voltage	120 V
Configuration	SINGLE
Minimum DC current gain (hFE)	80
JESD-30 code	O-MUPM-X3
Number of components	1
Number of terminals	3
Package body material	METAL
Package shape	ROUND
Package form	POST/STUD MOUNT
Polarity/channel type	NPN
Certification status	Not Qualified
surface mount	NO
Terminal form	UNSPECIFIED
Terminal location	UPPER
Transistor component materials	SILICON

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