BUR51S datasheet, PDF - EEWORLD Datasheet

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BUR51S: DescriptionPower Bipolar Transistor, 60A I(C), 250V V(BR)CEO, 1-Element, NPN, Silicon, TO-204AE, Metal, 2 Pin, HERMETIC SEALED, METAL, TO-3, 2 PIN; CategoryDiscrete semiconductor The transistor; File Size11KB，1 Pages; ManufacturerTT Electronics plc; Websitehttp://www.ttelectronics.com/

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BUR51S Overview

Power Bipolar Transistor, 60A I(C), 250V V(BR)CEO, 1-Element, NPN, Silicon, TO-204AE, Metal, 2 Pin, HERMETIC SEALED, METAL, TO-3, 2 PIN

BUR51S Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	TT Electronics plc
package instruction	HERMETIC SEALED, METAL, TO-3, 2 PIN
Reach Compliance Code	compliant
ECCN code	EAR99
Shell connection	COLLECTOR
Maximum collector current (IC)	60 A
Collector-emitter maximum voltage	250 V
Configuration	SINGLE
Minimum DC current gain (hFE)	15
JEDEC-95 code	TO-204AE
JESD-30 code	O-MBFM-P2
Number of components	1
Number of terminals	2
Package body material	METAL
Package shape	ROUND
Package form	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	NPN
Certification status	Not Qualified
surface mount	NO
Terminal form	PIN/PEG
Terminal location	BOTTOM
Maximum time at peak reflow temperature	NOT SPECIFIED
Transistor component materials	SILICON
Nominal transition frequency (fT)	16 MHz

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BUR51S

Dimensions in mm (inches).

25.15 (0.99)

26.67 (1.05)

10.67 (0.42)

11.18 (0.44)

1.52 (0.06)

3.43 (0.135)

6.35 (0.25)

9.15 (0.36)

Bipolar NPN Device in a

Hermetically sealed TO3

Metal Package.

38.61 (1.52)

39.12 (1.54)

1.47 (0.058)

1.60 (0.063)

29.9 (1.177)

30.4 (1.197)

16.64 (0.655)

17.15 (0.675)

(case)

3.84 (0.151)

4.09 (0.161)

7.92 (0.312)

12.70 (0.50)

TO3 (TO204AE)

PINOUTS

1 – Base

2 – Emitter

Case - Collector

Parameter

CEO

C(CONT)

Test Conditions

22.23

(0.875)

max.

Min.

Typ.

Max.

250

Units

@ 4/40 (V

/ I

)

16M

350

* Maximum Working Voltage

This is a shortform datasheet. For a full datasheet please contact

sales@semelab.co.uk.

Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed

to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.

Semelab plc.

Telephone +44(0)1455 556565. Fax +44(0)1455 552612.

E-mail:

sales@semelab.co.uk

Website:

http://www.semelab.co.uk

Generated

1-Aug-02

BUR51S Related Products

	BUR51S	BUR51S.MODR1	BUR51SR1	BUR51S.MOD
Description	Power Bipolar Transistor, 60A I(C), 250V V(BR)CEO, 1-Element, NPN, Silicon, TO-204AE, Metal, 2 Pin, HERMETIC SEALED, METAL, TO-3, 2 PIN	Power Bipolar Transistor, 60A I(C), 250V V(BR)CEO, 1-Element, NPN, Silicon, TO-204AE, Metal, 2 Pin, HERMETIC SEALED, METAL, TO-3, 2 PIN	Power Bipolar Transistor, 60A I(C), 250V V(BR)CEO, 1-Element, NPN, Silicon, TO-204AE, Metal, 2 Pin, HERMETIC SEALED, METAL, TO-3, 2 PIN	Power Bipolar Transistor, 60A I(C), 250V V(BR)CEO, 1-Element, NPN, Silicon, TO-204AE, Metal, 2 Pin, HERMETIC SEALED, METAL, TO-3, 2 PIN
Is it Rohs certified?	incompatible	conform to	conform to	incompatible
Maker	TT Electronics plc	TT Electronics plc	TT Electronics plc	TT Electronics plc
package instruction	HERMETIC SEALED, METAL, TO-3, 2 PIN	HERMETIC SEALED, METAL, TO-3, 2 PIN	HERMETIC SEALED, METAL, TO-3, 2 PIN	HERMETIC SEALED, METAL, TO-3, 2 PIN
Reach Compliance Code	compliant	compliant	compliant	compliant
ECCN code	EAR99	EAR99	EAR99	EAR99
Shell connection	COLLECTOR	COLLECTOR	COLLECTOR	COLLECTOR
Maximum collector current (IC)	60 A	60 A	60 A	60 A
Collector-emitter maximum voltage	250 V	250 V	250 V	250 V
Configuration	SINGLE	SINGLE	SINGLE	SINGLE
Minimum DC current gain (hFE)	15	15	15	15
JEDEC-95 code	TO-204AE	TO-204AE	TO-204AE	TO-204AE
JESD-30 code	O-MBFM-P2	O-MBFM-P2	O-MBFM-P2	O-MBFM-P2
Number of components	1	1	1	1
Number of terminals	2	2	2	2
Package body material	METAL	METAL	METAL	METAL
Package shape	ROUND	ROUND	ROUND	ROUND
Package form	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
Polarity/channel type	NPN	NPN	NPN	NPN
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified
surface mount	NO	NO	NO	NO
Terminal form	PIN/PEG	PIN/PEG	PIN/PEG	PIN/PEG
Terminal location	BOTTOM	BOTTOM	BOTTOM	BOTTOM
Maximum time at peak reflow temperature	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
Transistor component materials	SILICON	SILICON	SILICON	SILICON
Nominal transition frequency (fT)	16 MHz	16 MHz	16 MHz	16 MHz

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