KSC1008
NPN EPITAXIAL SILICON TRANSISTOR
LOW FREQUENCY AMPLIFIER
MEDIUM SPEED SWITCHING
•
Complement to KSA708
•
High Collector-Base Voltage: V
CBO
=80V
•
Collector Current: I
C
=700mA
•
Collector Dissipation: P
C
=800mW
TO-92
ABSOLUTE MAXIMUM RATINGS (T
A
=25°C)
°
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
J
T
STG
Rating
80
60
8
700
800
150
-55 ~ 150
Unit
V
V
V
mA
mW
°C
°C
1. Emitter 2. Base 3. Collector
ELECTRICAL CHARACTERISTICS (T
A
=25°C)
°
Characteristic
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Current Gain-Bandwidth Product
Output Capacitance
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
h
FE
V
CE
(sat)
V
BE
(sat)
f
T
C
OB
Test Conditions
I
C
=100µA, I
E
=0
I
C
=10mA, I
B
=0
I
E
=10µA, I
C
=0
V
CB
=60V, I
E
=0
V
EB
=5V, I
C
=0
V
CE
=2V, I
C
=50mA
I
C
=500mA, I
B
=50mA
I
C
=500mA, I
B
=50mA
V
CE
=10V, I
C
=50mA
V
CB
=10V, I
E
=0
f=1MHz
Min
80
60
8
0.1
0.1
400
0.4
1.1
Typ
Max
Unit
V
V
V
µA
µA
V
V
MHz
pF
40
0.2
0.86
50
8
30
h
FE
CLASSIFICATION
Classification
h
FE
R
40-80
O
70-140
Y
120-240
G
200-400
Rev. B
©
1999 Fairchild Semiconductor Corporation
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effectiveness.
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Advance Information
Product Status
Formative or
In Design
Definition
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
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Microcontroller MCU
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