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BCW60C

Description
Small Signal Bipolar Transistor, 0.1A I(C), 32V V(BR)CEO, 1-Element, NPN, Silicon, PLASTIC PACKAGE-3
CategoryDiscrete semiconductor    The transistor   
File Size286KB,2 Pages
ManufacturerRectron
Environmental Compliance  
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Small Signal Bipolar Transistor, 0.1A I(C), 32V V(BR)CEO, 1-Element, NPN, Silicon, PLASTIC PACKAGE-3

BCW60C Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerRectron
package instructionPLASTIC PACKAGE-3
Contacts3
Reach Compliance Codecompliant
ECCN codeEAR99
Maximum collector current (IC)0.1 A
Collector-emitter maximum voltage32 V
ConfigurationSINGLE
Minimum DC current gain (hFE)100
JESD-30 codeR-PDSO-G3
JESD-609 codee3
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)265
Polarity/channel typeNPN
Certification statusNot Qualified
surface mountYES
Terminal surfaceMatte Tin (Sn)
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
Transistor component materialsSILICON
Nominal transition frequency (fT)100 MHz
TECHNICAL SPECIFICATION
SEMICONDUCTOR
SOT-23 BIPOLAR TRANSISTORS
TRANSISTOR(NPN)
RECTRON
BCW60C
* Power dissipation
P
CM
:
0.25
W (Tamb=25
O
C)
* Collector current
I
CM
:
0.1
A
* Collector-base voltage
V
(BR)CBO
:
32
V
* Operating and storage junction temperature range
T
J
,T
stg
: -55
O
C to +150
O
C
FEATURES
SOT-23
COLLECTOR
3
MECHANICAL DATA
*
*
*
*
*
Case: Molded plastic
Epoxy: UL 94V-O rate flame retardant
Lead: MIL-STD-202E method 208C guaranteed
Mounting position: Any
Weight: 0.008 gram
BASE
1
EMITTER
2
0.055(1.40)
0.047(1.20)
0.006(0.15)
0.003(0.08)
0.020(0.50)
0.012(0.30)
0.043(1.10)
0.035(0.90)
0.004(0.10)
0.000(0.00)
0.020(0.50)
0.012(0.30)
0.100(2.55)
0.089(2.25)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 C ambient temperature unless otherwise specified.
Single phase , half wave, 60H
Z
, resistive or inductive load.
For capacitive load, derate current by 20%.
O
0.019(2.00)
0.071(1.80)
1
3
2
0.118(3.00)
0.110(2.80)
Dimensions in inches and (millimeters)
ELECTRICAL CHARACTERISTICS
( @ TA = 25
o
C unless otherwise noted )
CHARACTERISTICS
Collector-base breakdown voltage (I
C
= 10mA, I
E
=0)
Collector-emitter breakdown voltage (I
C
= 1mA, I
B
=0)
Emitter-base breakdown voltage (I
E
= 10mA, I
C
=0)
Collector cut-off current (V
CB
= 32V, I
E
=0)
Collector cut-off current (V
EB
= 4V, I
C
=0)
DC current gain (V
CE
= 5V, I
C
= 10mA)
DC current gain (V
CE
= 5V, I
C
= 2mA)
DC current gain (V
CE
= 5V, I
C
= 50mA)
Collector-emitter saturation voltage (I
C
= 10mA, I
B
= 0.25mA)
Collector-emitter saturation voltage (I
C
= 50mA, I
B
= 1.25mA)
Base-emitter saturation voltage (I
C
= 10mA, I
B
= 0.25mA)
Base-emitter saturation voltage (I
C
= 50mA, I
B
= 1.25mA)
Base-emitter voltage (V
CE
= 5V, I
C
= 2mA)
Transition frequency (V
CE
= 5V, I
C
= 10mA, f=100MH
Z
)
Output capacitance (V
CB
= 10V, I
E
= 0, f=1MH
Z
)
Marking
V
BE(sat)
V
BE
f
T
Cob
V
CE(sat)
h
FE
SYMBOL
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
MIN
32
32
5
-
-
40
250
100
-
-
-
-
0.55
100
-
AC
2006-3
TYP
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
MAX
-
-
-
0.02
0.02
-
460
-
0.35
0.55
0.85
1.05
0.75
-
5
UNITS
V
V
V
mA
mA
-
-
-
V
V
V
V
V
MH
Z
pF

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