KSC5021F
KSC5021F
High Voltage and High Reliability
• High Speed Switching : t
F
= 0.1µs(Typ.)
• Wide SOA
1
TO-220F
2.Collector
3.Emitter
1.Base
NPN Silicon Transistor
Absolute Maximum Ratings
T
C
=25°C unless otherwise noted
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
I
B
P
C
T
J
T
STG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Base Current
Collector Dissipation (T
C
=25°C)
Junction Temperature
Storage Temperature
Parameter
Value
800
500
7
5
10
2
40
150
- 55 ~ 150
Units
V
V
V
A
A
A
W
°C
°C
Electrical Characteristics
T
C
=25°C unless otherwise noted
Symbol
BV
CBO
BV
CEO
BV
EBO
V
CEX
(sus)
I
CBO
I
EBO
h
FE1
h
FE2
V
CE
(sat)
V
BE
(sat)
C
ob
f
T
t
ON
t
STG
t
F
Parameter
Collector-Base Breakdown Voltage
Collector-Emitter Sustaining Voltage
Emitter-Base Breakdown Voltage
Collector-Emitter Sustaining Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Output Capacitance
Current Gain Bandwidth Product
Turn On Time
Storage Time
Fall Time
Test Condition
I
C
= 1mA, I
E
= 0
I
C
= 5mA, I
B
= 0
I
E
= 1mA, I
C
= 0
I
C
= 2.5A, I
B1
= -I
B2
= 1A
L = 1mH, Clamped
V
CB
= 500V, I
E
= 0
V
EB
= 5V, I
C
= 0
V
CE
= 5V, I
C
= 0.6A
V
CE
= 5V, I
C
= 3A
I
C
= 3A, I
B
= 0.6A
I
C
= 3A, I
B
= 0.6A
V
CB
= 10V, I
E
= 0, f = 1MHz
V
CE
= 10V, I
C
= 0.6A
V
CC
= 200V
I
C
= 5I
B1
= -2.5I
B2
= 4A
R
L
= 50Ω
80
15
0.5
3
0.3
15
8
Min.
800
500
7
500
10
10
50
1
1.5
V
V
pF
MHz
µs
µs
µs
Typ.
Max.
Units
V
V
V
V
µA
µA
h
FE
Classification
Classification
h
FE1
R
15 ~ 30
O
20 ~ 40
Y
30 ~ 50
©2002 Fairchild Semiconductor Corporation
Rev. B1, December 2002
KSC5021F
Typical Characteristics
5
1000
I
B
= 800mA
I
B
= 600mA
I
B
= 400mA
V
CE
= 5V
I
C
[A], COLLECTOR CURRENT
4
I
B
= 1.2A
3
h
FE
, DC CURRENT GAIN
I
B
= 1A
100
I
B
= 200mA
2
I
B
= 100mA
10
I
B
= 50mA
1
I
B
= 20mA
0
0
2
4
6
I
B
= 0
8
10
1
0.01
0.1
1
10
V
CE
[V], COLLECTOR-EMITTER VOLTAGE
I
C
[A], COLLECTOR CURRENT
Figure 1. Static Characteristic
Figure 2. DC current Gain
V
BE
(sat), V
CE
(sat)[V], SATURATION VOLTAGE
10
10
I
C
= 5 I
B
t
STG
1
V
BE
(sat)
t
ON
, t
STG
, t
F
[
µ
s], TIME
1
t
ON
0.1
t
F
0.1
V
CE
(sat)
0.01
0.01
0.1
1
10
0.01
0.1
1
10
I
C
[A], COLLECTOR CURRENT
I
C
[A], COLLECTOR CURRENT
Figure 3. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
Figure 4. Switching Time
6
100
V
CE
= 5V
5
I
C
[A], COLLECTOR CURRENT
I
C
[A], COLLECTOR CURRENT
10
I
CP
(max)
I
C
(max)
50
µ
s
s
m
10
s
1m
0
µ
50
4
s
DC
1
3
2
0.1
1
0
0.0
0.01
0.2
0.4
0.6
0.8
1.0
1.2
1
10
100
1000
V
BE
[V], BASE-EMITTER VOLTAGE
V
CE
[V], COLLECTOR-EMITTER VOLTAGE
Figure 5. Base-Emitter On Voltage
Figure 6. Safe Operating Area
©2002 Fairchild Semiconductor Corporation
Rev. B1, December 2002
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
ACEx™
FACT™
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Bottomless™
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®
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GTO™
2
CMOS™
E
HiSeC™
EnSigna™
I
2
C™
Across the board. Around the world.™
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DISCLAIMER
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OCX™
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OPTOLOGIC
®
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®
QFET™
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®
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®
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PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY
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NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
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FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR
INTERNATIONAL.
As used herein:
1. Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body,
or (b) support or sustain life, or (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
result in significant injury to the user.
2. A critical component is any component of a life support
device or system whose failure to perform can be
reasonably expected to cause the failure of the life support
device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Advance Information
Product Status
Formative or In
Design
First Production
Definition
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Preliminary
No Identification Needed
Full Production
Obsolete
Not In Production
©2002 Fairchild Semiconductor Corporation
Rev. I1
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