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KSD1616A-G

Description
Small Signal Bipolar Transistor, 1A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, PLASTIC PACKAGE-3
CategoryDiscrete semiconductor    The transistor   
File Size97KB,2 Pages
ManufacturerMicro Commercial Components (MCC)
Download Datasheet Parametric View All

KSD1616A-G Overview

Small Signal Bipolar Transistor, 1A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, PLASTIC PACKAGE-3

KSD1616A-G Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerMicro Commercial Components (MCC)
Parts packaging codeTO-92
package instructionCYLINDRICAL, O-PBCY-T3
Contacts3
Reach Compliance Codecompliant
ECCN codeEAR99
Maximum collector current (IC)1 A
Collector-emitter maximum voltage60 V
ConfigurationSINGLE
Minimum DC current gain (hFE)200
JEDEC-95 codeTO-92
JESD-30 codeO-PBCY-T3
JESD-609 codee0
Number of components1
Number of terminals3
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formCYLINDRICAL
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeNPN
Certification statusNot Qualified
surface mountNO
Terminal surfaceTIN LEAD
Terminal formTHROUGH-HOLE
Terminal locationBOTTOM
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)160 MHz
MCC
Micro Commercial Components
TM
  omponents
20736 Marilla Street Chatsworth

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$ %    !"#
KSD1616
KSD1616-Y/G/L
KSD1616A
KSD1616A-Y/G
NPN Silicon
Epitaxial Transistors
Features
Audio frequency power amplifier & medium speed switching
Marking:D1616 X
Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0
Symbol
V
CEO
Rating
Collector-Emitter Voltage
KSD1616
KSD1616A
V
CBO
Collector-Base Voltage
KSD1616
KSD1616A
V
EBO
I
C
I
CP
P
C
T
J
T
STG
Symbol
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
(1)
Collector power dissipation
Junction Temperature
Storage Temperature
Parameter
Collector Cutoff Current
(V
CB
=60Vdc,I
E
=0)
Emitter-Base Cutoff Current
(V
EB
=6.0Vdc, I
C
=0)
DC Current Gain
(I
C
=100mAdc, V
CE
=2.0Vdc)
KSD1616
KSD1616A
DC Current Gain
(V
CE
=2.0Vdc, I
C
=1.0Adc)
Collector-Emitter Saturation Voltage
(2)
(I
C
=1.0Adc, I
B
=50mAdc)
Base-Emitter Saturation Voltage
(2)
(I
C
=1.5Adc, I
B
=75mAdc)
Base-Emitter On Voltage
(2)
(V
CE
=2.0Vdc, I
C
=50mAdc)
Current Gain Bandwidth Product
(I
C
=100mAdc, V
CE
=2.0Vdc)
Collector Output Capacitance
(V
CE
=10Vdc, I
E
=0, f=1.0MHz)
V
CC
=10V,
Turn On Time
I
C
=100mA,
Storage Time
I
B1
=I
B2
=10mA,
Fall Time
V
BE(off)
=-2~-3V
60
120
6.0
1.0
2.0
0.75
-55 to +150
-55 to +150
Min
---
---
Typ
---
---
Max
100
100
V
V
A
A
W
O
C
O
C
Units
nAdc
nAdc
C
A
E
Maximum Ratings
Rating
50
60
Unit
V
TO-92
B
1
2
3
Electrical Characteristics @ 25
O
C Unless Otherwise Specified
OFF CHARACTERISTICS
I
CBO
I
EBO
ON CHARACTERISTICS
h
FE-1
D
135
135
81
---
---
600
100
---
---
---
---
---
---
---
0.15
0.9
640
160
19
0.07
0.95
0.07
600
400
---
0.3
1.2
700
---
---
---
---
---
---
---
Vdc
Vdc
G
h
FE-2
V
CE(sat)
V
BE(sat)
V
BE(ON)
f
T
C
ob
T
ON
t
STG
T
F
PIN 1.
PIN 2.
PIN 3.
EMITTER
COLLECTOR
BASE
mVdc
MHz
pF
INCHES
DIMENSIONS
MM
MIN
4.45
4.46
12.7
0.41
3.43
2.42
MAX
4.70
4.70
---
0.63
3.68
2.67
NOTE
us
us
us
h
FE ( 1)
Classification
Classification
Y
G
h
FE-1
135-270
200-400
(1) PW<10ms, Duty Cycle<50%
(2) (2) Pulse Test: PW<350us, Duty Cycle<2% Pulsed
L
300-600
DIM
A
B
C
D
E
G
MIN
.175
.175
.500
.016
.135
.095
MAX
.185
.185
---
.020
.145
.105
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