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KSD1616AGBU_NL

Description
Small Signal Bipolar Transistor, 1A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, LEAD FREE PACKAGE-3
CategoryDiscrete semiconductor    The transistor   
File Size204KB,5 Pages
ManufacturerFairchild
Websitehttp://www.fairchildsemi.com/
Download Datasheet Parametric View All

KSD1616AGBU_NL Overview

Small Signal Bipolar Transistor, 1A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, LEAD FREE PACKAGE-3

KSD1616AGBU_NL Parametric

Parameter NameAttribute value
MakerFairchild
Parts packaging codeTO-92
package instructionCYLINDRICAL, O-PBCY-T3
Contacts3
Reach Compliance Codeunknown
ECCN codeEAR99
Maximum collector current (IC)1 A
Collector-emitter maximum voltage60 V
ConfigurationSINGLE
Minimum DC current gain (hFE)200
JEDEC-95 codeTO-92
JESD-30 codeO-PBCY-T3
JESD-609 codee3
Number of components1
Number of terminals3
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formCYLINDRICAL
Polarity/channel typeNPN
Certification statusNot Qualified
surface mountNO
Terminal surfaceMATTE TIN
Terminal formTHROUGH-HOLE
Terminal locationBOTTOM
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)160 MHz
KSD1616/1616A — Audio Frequency Power Amplifier & Medium Speed Switching
November 2007
KSD1616/1616A
Audio Frequency Power Amplifier & Medium Speed Switching
• Complement to KSB1116/1116A
1
TO-92
1. Emitter 2. Collector 3. Base
Absolute Maximum Ratings
T
a
=25°C unless otherwise noted
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
P
C
T
J
T
STG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
* Collector Current (Pulse)
Collector Power Dissipation
Junction Temperature
Storage Temperature
Parameter
: KSD1616
: KSD1616A
: KSD1616
: KSD1616A
Ratings
60
120
50
60
6
1
2
0.75
150
-55 ~ 150
Units
V
V
V
V
V
A
A
W
°C
°C
* PW≤10ms, Duty Cycle < 50%
Electrical Characteristics
T
a
=25°C unless otherwise noted
Symbol
I
CBO
I
EBO
h
FE1
h
FE2
V
BE
(on)
V
CE
(sat)
V
BE
(sat)
C
ob
f
T
t
ON
t
STG
t
F
* Base-Emitter On Voltage
* Collector-Emitter Saturation Voltage
* Base-Emitter Saturation Voltage
Output Capacitance
Current Gain Bandwidth Product
Turn On Time
Storage Time
Fall Time
Parameter
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
: KSD1616
: KSD1616A
Test Condition
V
CB
=60V, I
E
=0
V
EB
=6V, I
C
=0
V
CE
=2V, I
C
=100mA
V
CE
=2V, I
C
=1A
V
CE
=2V, I
C
=50mA
I
C
=1A, I
B
=50mA
I
C
=1A, I
B
=50mA
V
CE
=10V, I
E
=0, f=1MHz
V
CE
=2V, I
C
=100mA
V
CC
=10V, I
C
=100mA
I
B1
= -I
B2
=10mA
V
BE
(off) = -2~-3V
100
135
135
81
600
640
0.15
0.9
19
160
0.07
0.95
0.07
Min.
Typ.
Max.
100
100
600
400
700
0.3
1.2
mV
V
V
pF
MHz
μs
μs
μs
Units
nA
nA
* Pulse Test: PW<350μs, Duty Cycle≤2% Pulsed
© 2007 Fairchild Semiconductor Corporation
KSD1616/1616A Rev. 1.0.0
1
www.fairchildsemi.com

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