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Datasheet> All Categories > Discrete semiconductor> The transistor> KSH29CITU
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KSH29CITU

Description
Power Bipolar Transistor, 1A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-251, Plastic/Epoxy, 3 Pin, IPAK-3
CategoryDiscrete semiconductor    The transistor   
File Size48KB，5 Pages
ManufacturerFairchild
Websitehttp://www.fairchildsemi.com/
Environmental Compliance
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KSH29CITU Overview

Power Bipolar Transistor, 1A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-251, Plastic/Epoxy, 3 Pin, IPAK-3

KSH29CITU Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerFairchild
Parts packaging codeTO-251
package instructionIPAK-3
Contacts3
Reach Compliance Codenot_compliant
ECCN codeEAR99
Maximum collector current (IC)1 A
Collector-emitter maximum voltage100 V
ConfigurationSINGLE
Minimum DC current gain (hFE)15
JEDEC-95 codeTO-251
JESD-30 codeR-PSIP-T3
JESD-609 codee3
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formIN-LINE
Peak Reflow Temperature (Celsius)NOT APPLICABLE
Polarity/channel typeNPN
Maximum power dissipation(Abs)15 W
Certification statusNot Qualified
surface mountNO
Terminal surfaceMatte Tin (Sn)
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT APPLICABLE
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Nominal transition frequency (fT)3 MHz

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KSH29/29C
KSH29/29C
General Purpose Amplifier
Low Speed Switching Applications
• Lead Formed for Surface Mount Application (No Suffix)
• Straight Lead (I-PAK, “- I” Suffix)
• Electrically Similar to Popular TIP29 and TIP29C
1
D-PAK
1.Base
1
I-PAK
3.Emitter
2.Collector
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
C
=25°C unless otherwise noted
Symbol
V
CBO
Collector-Base Voltage
: KSH29
: KSH29C
V
CEO
Collector-Emitter Voltage
: KSH29
: KSH29C
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Base Current
Collector Dissipation (T
C
=25°C)
Collector Dissipation (T
a
=25°C)
T
J
T
STG
Junction Temperature
Storage Temperature
40
100
40
100
5
1
3
0.4
15
1.56
150
- 65 ~ 150
V
V
V
V
V
A
A
A
W
W
°C
°C
Parameter
Value
Units
V
EBO
I
C
I
CP
I
B
P
C
Electrical Characteristics
T
C
=25°C unless otherwise noted
Symbol
V
CEO
(sus)
Parameter
Collector-Emitter Sustaining Voltage
: KSH29
: KSH29C
Collector Cut-off Current
: KSH29
: KSH29C
I
CES
Collector Cut-off Current
: KSH29
: KSH29C
I
EBO
h
FE
V
CE
(sat)
V
BE
(on)
f
T
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
Current Gain Bandwidth Product
V
CE
= 40V, V
BE
= 0
V
CE
= 100V, V
BE
= 0
V
BE
= 5V, I
C
= 0
V
CE
= 4V, I
C
= 0.2A
V
CE
= 4V, I
C
= 1A
I
C
= 1A, I
B
= 125mA
V
CE
= 4A, I
C
= 1A
V
CE
= 10V, I
C
= 200mA
3
40
15
20
20
1
75
0.7
1.3
V
V
MHz
µA
µA
mA
V
CE
= 40V, I
B
= 0
V
CE
= 60V, I
B
= 0
50
50
µA
µA
Test Condition
I
C
= 30mA, I
B
= 0
Min.
40
100
Max.
Units
V
V
I
CEO
©2002 Fairchild Semiconductor Corporation
Rev. A4, October 2002

KSH29CITU Related Products

KSH29CITU KSH29ITU
Description Power Bipolar Transistor, 1A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-251, Plastic/Epoxy, 3 Pin, IPAK-3 Power Bipolar Transistor, 1A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, TO-251, Plastic/Epoxy, 3 Pin, IPAK-3
Is it Rohs certified? conform to conform to
Maker Fairchild Fairchild
Parts packaging code TO-251 TO-251
package instruction IPAK-3 IPAK-3
Contacts 3 3
Reach Compliance Code not_compliant not_compliant
ECCN code EAR99 EAR99
Maximum collector current (IC) 1 A 1 A
Collector-emitter maximum voltage 100 V 40 V
Configuration SINGLE SINGLE
Minimum DC current gain (hFE) 15 15
JEDEC-95 code TO-251 TO-251
JESD-30 code R-PSIP-T3 R-PSIP-T3
JESD-609 code e3 e3
Number of components 1 1
Number of terminals 3 3
Maximum operating temperature 150 °C 150 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR
Package form IN-LINE IN-LINE
Peak Reflow Temperature (Celsius) NOT APPLICABLE NOT APPLICABLE
Polarity/channel type NPN NPN
Maximum power dissipation(Abs) 15 W 15 W
Certification status Not Qualified Not Qualified
surface mount NO NO
Terminal surface Matte Tin (Sn) Matte Tin (Sn)
Terminal form THROUGH-HOLE THROUGH-HOLE
Terminal location SINGLE SINGLE
Maximum time at peak reflow temperature NOT APPLICABLE NOT APPLICABLE
transistor applications AMPLIFIER AMPLIFIER
Transistor component materials SILICON SILICON
Nominal transition frequency (fT) 3 MHz 3 MHz

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