KSR1110TF datasheet, PDF - EEWORLD Datasheet

KSR1110TF: DescriptionSmall Signal Bipolar Transistor, 0.1A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, SOT-23, 3 PIN; CategoryDiscrete semiconductor The transistor; File Size40KB，1 Pages; ManufacturerSAMSUNG; Websitehttp://www.samsung.com/Products/Semiconductor/

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KSR1110TF Overview

Small Signal Bipolar Transistor, 0.1A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, SOT-23, 3 PIN

Parameter Name	Attribute value
Maker	SAMSUNG
Parts packaging code	SOT-23
package instruction	SMALL OUTLINE, R-PDSO-G3
Contacts	3
Reach Compliance Code	unknown
ECCN code	EAR99
Other features	DIGITAL, BUILT-IN BIAS RESISTOR
Maximum collector current (IC)	0.1 A
Collector-emitter maximum voltage	40 V
Configuration	SINGLE WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE)	100
JESD-30 code	R-PDSO-G3
Number of components	1
Number of terminals	3
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Polarity/channel type	NPN
Certification status	Not Qualified
surface mount	YES
Terminal form	GULL WING
Terminal location	DUAL
transistor applications	SWITCHING
Transistor component materials	SILICON
Nominal transition frequency (fT)	250 MHz

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