KTD718B-R datasheet, PDF - EEWORLD Datasheet

EEWORLDEEWORLD

Datasheet

Datasheet> All Categories > Discrete semiconductor> The transistor> KTD718B-R

Preview

KTD718B-R: DescriptionPower Bipolar Transistor, 10A I(C), 120V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, TO-3P(N)-E, 3 PIN; CategoryDiscrete semiconductor The transistor; File Size443KB，2 Pages; ManufacturerKEC; Websitehttp://www.keccorp.com/

Download Datasheet Parametric Compare View All

KTD718B-R Overview

Power Bipolar Transistor, 10A I(C), 120V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, TO-3P(N)-E, 3 PIN

KTD718B-R Parametric

Parameter Name	Attribute value
Maker	KEC
Parts packaging code	TO-3P
package instruction	FLANGE MOUNT, R-PSFM-T3
Contacts	3
Reach Compliance Code	unknown
ECCN code	EAR99
Shell connection	COLLECTOR
Maximum collector current (IC)	10 A
Collector-emitter maximum voltage	120 V
Configuration	SINGLE
Minimum DC current gain (hFE)	55
JESD-30 code	R-PSFM-T3
Number of components	1
Number of terminals	3
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Polarity/channel type	NPN
Certification status	Not Qualified
surface mount	NO
Terminal form	THROUGH-HOLE
Terminal location	SINGLE
transistor applications	AMPLIFIER
Transistor component materials	SILICON
Nominal transition frequency (fT)	12 MHz

Preview

Download Datasheet

View All

SEMICONDUCTOR

TECHNICAL DATA

HIGH POWER AMPLIFIER APPLICATION.

FEATURES

Recommended for 45 50W Audio Frequency Amplifier Output Stage.

Complementary to KTB688B.

A

N

O

KTD718B

TRIPLE DIFFUSED NPN TRANSISTOR

Q

B

K

F

D

L

MAXIMUM RATING (Ta=25

CHARACTERISTIC

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

Base Current

)

SYMBOL

V

CBO

V

CEO

V

EBO

I

C

I

B

)

P

C

T

j

T

stg

RATING

120

5

10

1

80

150

-55 150

UNIT

V

A

W

E

d

M

P

T

1

2

3

1. BASE

2. COLLECTOR (HEAT SINK)

3. EMITTER

DIM MILLIMETERS

_

A

15.60 + 0.20

_

B

4.80 + 0.20

_

C

19.90 + 0.20

_

D

2.00 + 0.20

_

d

1.00 + 0.20

_

E

3.00 + 0.20

_

3.80 + 0.20

F

_ 0.20

G

3.50 +

_

H

13.90 + 0.20

_

I

12.76 + 0.20

_

J

23.40 + 0.20

K

1.5+0.15-0.05

_

L

16.50 + 0.30

_ 0.20

M

1.40 +

_

13.60 + 0.20

N

_

+ 0.20

9.60

O

_

P

5.45 + 0.30

_

Q

3.20 + 0.10

_

R

18.70 + 0.20

0.60+0.15-0.05

T

C

J

H

I

Collector Power Dissipation (Tc=25

Junction Temperature

Storage Temperature Range

TO-3P(N)-E

ELECTRICAL CHARACTERISTICS (Ta=25 )

CHARACTERISTIC

Collector Cut-off Current

Emitter Cut-off Current

Collector-Emitter Breakdown Voltage

DC Current Gain

Collector-Emitter Saturation Voltage

Base-Emitter Voltage

Transition Frequency

Collector Output Capacitance

Note : h

FE

Classification R:55

110,

O:80

160

SYMBOL

I

CBO

I

EBO

V

(BR)CEO

h

FE

(Note)

V

CE(sat)

V

BE

f

T

C

ob

TEST CONDITION

V

CB

=120V, I

E

=0

V

EB

=5V, I

C

=0

I

C

=50mA, I

B

=0

V

CE

=5V, I

C

=1A

I

C

=6A, I

B

=0.6A

V

CE

=5V, I

C

=5A

V

CE

=5V, I

C

=1A

V

CB

=10V, I

E

=0, f=1MHz

MIN.

-

120

55

-

TYP.

-

12

170

MAX.

10

-

160

2.0

1.5

-

V

MHz

pF

UNIT

A

V

2005. 3. 14

Revision No : 1

G

R

1/2

KTD718B-R Related Products

	KTD718B-R	KTD718B-O
Description	Power Bipolar Transistor, 10A I(C), 120V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, TO-3P(N)-E, 3 PIN	Power Bipolar Transistor, 10A I(C), 120V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, TO-3P(N)-E, 3 PIN
Maker	KEC	KEC
Parts packaging code	TO-3P	TO-3P
package instruction	FLANGE MOUNT, R-PSFM-T3	FLANGE MOUNT, R-PSFM-T3
Contacts	3	3
Reach Compliance Code	unknown	unknown
ECCN code	EAR99	EAR99
Shell connection	COLLECTOR	COLLECTOR
Maximum collector current (IC)	10 A	10 A
Collector-emitter maximum voltage	120 V	120 V
Configuration	SINGLE	SINGLE
Minimum DC current gain (hFE)	55	80
JESD-30 code	R-PSFM-T3	R-PSFM-T3
Number of components	1	1
Number of terminals	3	3
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR
Package form	FLANGE MOUNT	FLANGE MOUNT
Polarity/channel type	NPN	NPN
Certification status	Not Qualified	Not Qualified
surface mount	NO	NO
Terminal form	THROUGH-HOLE	THROUGH-HOLE
Terminal location	SINGLE	SINGLE
transistor applications	AMPLIFIER	AMPLIFIER
Transistor component materials	SILICON	SILICON
Nominal transition frequency (fT)	12 MHz	12 MHz

Recommended Resources

One-digit display timer circuit diagram

Ten-band equalizer composed of TA7796

Microcomputer circuit compatible with sensor

Integral (quadrature) detection circuit for light-emitting diodes

Frequency adjustable multivibrator

Shortcut: L0 L1 L2 L3 L4 L5 L6 L7 L8 L9 LA LB LC LD LE LF LG LH LI LJ LK LL LM LN LO LP LQ LR LS LT LU LV LW LX LY LZ M0 M1 M2 M3 M4 M5 M6 M7 M8 M9 MA MB MC MD ME MF MG MH MI MJ MK ML MM MN MO MP MQ MR MS MT MU MV MW MX MY MZ N0 N1 N2 N3 N4 N5 N6 N7 N8 NA NB NC ND NE NF NG NH NI NJ NK NL NM NN NO NP NQ NR NS NT NU NV NX NZ O0 O1 O2 O3 OA OB OC OD OE OF OG OH OI OJ OK OL OM ON OP OQ OR OS OT OV OX OY OZ P0 P1 P2 P3 P4 P5 P6 P7 P8 P9 PA PB PC PD PE PF PG PH PI PJ PK PL PM PN PO PP PQ PR PS PT PU PV PW PX PY PZ Q1 Q2 Q3 Q4 Q5 Q6 Q8 Q9 QA QB QC QE QF QG QH QK QL QM QP QR QS QT QV QW QX QY R0 R1 R2 R3 R4 R5 R6 R7 R8 R9 RA RB RC RD RE RF RG RH RI RJ RK RL RM RN RO RP RQ RR RS RT RU RV RW RX RY RZ

Popular Components