SEMICONDUCTOR
TECHNICAL DATA
SWITCHING APPLICATION.
INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION.
FEATURES
・With
Built-in Bias Resistors.
・Simplify
Circuit Design.
・Reduce
a Quantity of Parts and Manufacturing Process.
・Suffix
U : Qualified to AEC-Q101
ex) KRC110S-RTK/HU
Q
KRC110S~KRC114S
EPITAXIAL PLANAR NPN TRANSISTOR
L
E
B
L
2
A
G
H
3
1
P
P
B
R1
1. EMITTER
2. BASE
3. COLLECTOR
E
℃
MAXIMUM RATING (Ta=25℃)
CHARACTERISTIC
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
RATING
50
50
5
100
UNIT
V
V
V
mA
CHARACTERISTIC
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
SYMBOL
P
C
T
j
T
stg
RATING
200
150
-55½150
UNIT
mW
℃
℃
℃
ELECTRICAL CHARACTERISTICS (Ta=25℃)
CHARACTERISTIC
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Transition Frequency
KRC110S
KRC111S
Input Resistor
KRC112S
KRC113S
KRC114S
Note : * Characteristic of Transistor Only.
R
1
SYMBOL
I
CBO
I
EBO
h
FE
V
CE(sat)
f
T
*
TEST CONDITION
V
CB
=50V, I
E
=0
V
EB
=5V, I
C
=0
V
CE
=5V, I
C
=1mA
I
C
=10mA, I
B
=0.5mA
V
CE
=10V, I
C
=5mA
MIN.
-
-
120
-
-
3.29
7
70
15.4
32.9
TYP.
-
-
-
0.1
250
4.7
10
100
22
47
MAX.
100
100
-
0.3
-
6.11
13
130
28.6
61.1
kΩ
V
MHz
UNIT
nA
nA
Marking
K
C
M
SOT-23
J
EQUIVALENT CIRCUIT
DIM
A
B
C
D
E
G
H
J
K
L
M
N
P
Q
MILLIMETERS
_
2.93 + 0.20
1.30+0.20/-0.15
1.30 MAX
0.40+0.15/-0.05
2.40+0.30/-0.20
1.90
0.95
0.13+0.10/-0.05
0.00 ~ 0.10
0.55
0.20 MIN
1.00+0.20/-0.10
7
0.1 MAX
C
N
D
Lot No.
MARK SPEC
TYPE
MARK
KRC110S
NK
KRC111S
NM
KRC112S
NN
KRC113S
NO
KRC114S
NP
Type Name
2018. 04. 10
Revision No : 4
1/4
KRC110S~KRC114S
h
FE
- I
C
COLLECTOR-EMITTER SATURATION
VOLTAGE V
CE(sat)
(V)
2k
DC CURRENT GAIN h
FE
1k
500
300
100
50
30
V
CE
=5V
Ta=100 C
Ta=25 C
Ta=-25 C
KRC110S
V
CE(sat)
- I
C
2
1
0.5
0.3
KRC110S
I
C
/I
B
=20
0.1
0.05
0.03
0.01
0.1
Ta=100 C
Ta=25 C
Ta=-25 C
10
0.1
0.3
1
3
10
30
100
0.3
1
3
10
30
100
COLLECTOR CURRENT I
C
(mA)
COLLECTOR CURRENT I
C
(mA)
h
FE
- I
C
COLLECTOR-EMITTER SATURATION
VOLTAGE V
CE(sat)
(V)
2k
DC CURRENT GAIN h
FE
1k
500
300
100
50
30
V
CE
=5V
Ta=100 C
Ta=25 C
Ta=-25 C
KRC111S
V
CE(sat)
- I
C
2
1
0.5
0.3
0.1
0.05
0.03
0.01
0.1
Ta=100 C
Ta=25 C
Ta=-25 C
KRC111S
I
C
/I
B
=20
10
0.1
0.3
1
3
10
30
100
0.3
1
3
10
30
100
COLLECTOR CURRENT I
C
(mA)
COLLECTOR CURRENT I
C
(mA)
h
FE
- I
C
COLLECTOR-EMITTER SATURATION
VOLTAGE V
CE(sat)
(V)
2k
1k
DC CURRENT GAIN h
FE
500
300
100
50
30
V
CE
=5V
KRC112S
V
CE(sat)
- I
C
2
1
0.5
0.3
0.1
0.05
0.03
0.01
Ta=100 C
Ta=25 C
Ta=-25 C
KRC112S
I
C
/I
B
=20
Ta=100 C
Ta=25 C
Ta=-25 C
10
0.1
0.3
1
3
10
30
100
0.1
0.3
1
3
10
30
100
COLLECTOR CURRENT I
C
(mA)
COLLECTOR CURRENT I
C
(mA)
2018. 04. 10
Revision No : 4
3/4
KRC110S~KRC114S
h
FE
- I
C
2k
DC CURRENT GAIN h
FE
1k
500
300
100
50
30
V
CE
=5V
V
CE(sat)
- I
C
COLLECTOR-EMITTER SATURATION
VOLTAGE V
CE(sat)
(V)
2
1
0.5
0.3
KRC113S
I
C
/I
B
=20
KRC113S
Ta=100 C
Ta=25 C
Ta=-25 C
0.1
0.05
0.03
0.01
0.1
0.3
1
3
10
30
100
COLLECTOR CURRENT I C (mA)
Ta=100 C
Ta=25 C
Ta=-25 C
10
0.1
0.3
1
3
10
30
100
COLLECTOR CURRENT I C (mA)
h
FE
- I
C
COLLECTOR-EMITTER SATURATION
VOLTAGE V
CE(sat)
(V)
2k
DC CURRENT GAIN h
FE
1k
500
300
100
50
30
V
CE
=5V
Ta=100 C
Ta=25 C
Ta=-25 C
KRC114S
V
CE(sat)
- I
C
2
1
0.5
0.3
0.1
0.05
0.03
0.01
0.1
0.3
1
3
10
30
100
Ta=100 C
Ta=25 C
Ta=-25 C
KRC114S
I
C
/I
B
=20
10
0.1
0.3
1
3
10
30
100
COLLECTOR CURRENT I
C
(mA)
COLLECTOR CURRENT I
C
(mA)
2018. 04. 10
Revision No : 4
4/4
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