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BYQ28EF-200

Description
Rectifier Diode,
CategoryDiscrete semiconductor    diode   
File Size40KB,2 Pages
ManufacturerEIC [EIC discrete Semiconductors]
Environmental Compliance  
Download Datasheet Parametric Compare View All

BYQ28EF-200 Overview

Rectifier Diode,

BYQ28EF-200 Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
MakerEIC [EIC discrete Semiconductors]
Reach Compliance Codecompliant
BYQ28EF Series
PRV : 100 - 200 Volts
Io : 10 Ampere
FEATURES :
* High current capability
* High surge current capability
* Low leakage, high voltage
* Glass passivated chip junction
* Pb / RoHS Free
Dual Ultrafast Plastic Rectifiers
ITO-220AB
0.134(3.4)DIA.
0.113(3.0)DIA.
0.112(2.85)
0.100(2.55)
0.406(10.3)MAX.
0.185(4.70)Max.
0.124(3.16)Max.
0.272(6.9)
0.248(6.3)
0.603(15.5)
0.573(14.8)
1
0.543(13.8)
0.512(13.2)
2 3
0.161(4.1)Max.
0.055(1.4)Max.
0.110(2.8)
0.098(2.5)
MECHANICAL DATA :
* Case : Epoxy, Molded
* Lead Temperature for Soldering Purposes:
260°C Max. for 10 Seconds
* Polarity: As marked
* Mounting Position: Any
* Weight : 2.24 grams (Approximately)
0.100(2.55)
PIN 1
PIN 2
0.035(0.9)Max.
0.030(0.76)Max.
PIN 3
Dimensions in inches and ( millimeters )
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(Tc =25°C unless otherwise specified.)
RATING
Maximum Repetitive Peak Reverse Voltage
Maximum Working Peak Reverse Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Current, Tc = 100°C
Maximum Peak Forward Surge Current
8.3ms single half sine-wave superimposed on
rated load (JEDEC Method) at Tc = 100°C
Maximum Non-reptitive Peak Reverse Current per Leg
Maximum Instantaneous Forward Voltage per Leg
at I
F
= 10A, Tj = 25°C
I
F
= 5.0A, Tj = 25°C
Maximum Reverse Current per Leg
at Working Peak Reverse Voltage
Maximum Reverse Recovery Time per Leg
(I
F
= 0.5A, I
R
= 1.0A, Irr = 0.25A )
Typical junction capacitance at 4V, 1MHz
Maximum Thermal Resistance, Junction to Case
Operating storage and temperature range
Page 1 of 2
I
R
I
R(H)
Trr
Cj
RθJC
T
J
, T
STG
V
F
1.25
1.1
10 (Tj = 25°C)
200 (Tj = 100°C)
20
85
6.7
- 55 to + 150
µA
µA
ns
pF
°C/W
°C
Rev. 02 : March 25, 2005
V
I
RSM
0.2 ( tp = 100µs)
A
I
FSM
55
A
SYMBOL BYQ28EF-100 BYQ28EF-150 BYQ28EF-200 UNIT
V
RRM
V
RWM
V
DC
I
F(AV)
100
100
100
150
150
150
10 (Total Device)
5 (Total Device)
200
200
200
V
V
V
A

BYQ28EF-200 Related Products

BYQ28EF-200 BYQ28EF-100 BYQ28EF-150
Description Rectifier Diode, Rectifier Diode, Rectifier Diode,
Is it lead-free? Lead free Lead free Lead free
Maker EIC [EIC discrete Semiconductors] EIC [EIC discrete Semiconductors] EIC [EIC discrete Semiconductors]
Reach Compliance Code compliant compliant compliant

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Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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