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SMUN5230DW

Description
NPN Multi-Chip Built-in Resistors Transistor
CategoryDiscrete semiconductor    The transistor   
File Size333KB,8 Pages
ManufacturerSECOS
Websitehttp://www.secosgmbh.com/
Download Datasheet Parametric View All

SMUN5230DW Overview

NPN Multi-Chip Built-in Resistors Transistor

SMUN5230DW Parametric

Parameter NameAttribute value
MakerSECOS
Reach Compliance Codecompli
SMUN52XXDW
Elektronische Bauelemente
NPN Multi-Chip
Built-in Resistors Transistor
SOT-363
.055(1.40)
.047(1.20)
.026TYP
(0.65TYP)
.021REF
(0.525)REF
.053(1.35)
.045(1.15)
8
o
0
o
The BRT (Bias Resistor Transistor) contains a single transistor
with a monolithic bias network consisting of two resistors; a series
base resistor and a base–emitter resistor. These digital transistors are
designed to replace a single device and its external resistor bias network.
The BRT eliminates these individual components by integrating them
into a single device. In the
SMUN5211DW
series, two BRT devices are
housed in the SOT–363 package which is ideal for low power surface
mount applications where board space is at a premium.
• Simplifies Circuit Design
• Reduces Board Space
• Reduces Component Count
• Pb-Free Package is available
MARKING DIAGRAM
6
5
4
6
5
4
.096(2.45)
.085(2.15)
.018(0.46)
.010(0.26)
.014(0.35)
.006(0.15)
.087(2.20)
.079(2.00)
.006(0.15)
.003(0.08)
.004(0.10)
.000(0.00)
.039(1.00)
.035(0.90)
Q
2
R
2
R
1
1
2
R
1
R
2
7X
Q
1
1
3
2
3
.043(1.10)
.035(0.90)
Dimensions in inches and (millimeters)
7X = Device Marking
MAXIMUM RATINGS
(T
A
= 25°C unless otherwise noted, common for Q
1
and Q
2
)
Rating
Collector-Base Voltage
Collector-Emitter Voltage
Collector Current
THERMAL CHARACTERISTICS
Symbol
V
CBO
V
CEO
I
C
Value
50
50
100
Unit
Vdc
Vdc
mAdc
Characteristic (One Junction Heated)
Total Device Dissipation
Derate above 25°C
T
A
= 25°C
Symbol
P
D
R
Max
Note 1
187
1.5
670
Max
Note 1
250
2.0
493
188
Note 2
385
3.0
325
208
Note 2
256
2.0
490
Unit
mW
mW/°C
°C/W
Unit
mW
mW/°C
°C/W
°C/W
°C
Thermal Resistance – Junction-to-Ambient
Characteristic (Both Junctions Heated)
Total Device Dissipation
Derate above 25°C
T
A
= 25°C
JA
Symbol
P
D
R
θJA
R
θJL
T
J
, T
stg
Thermal Resistance – Junction-to-Ambient
Thermal Resistance – Junction-to-Lead
Junction and Storage Temperature
1. FR–4 @ Minimum Pad
–55 to +150
2. FR–4 @ 1.0 x 1.0 inch Pad
http://www.SeCoSGmbH.com
Any changing of specification will not be informed individual
22-Jun-2007
Rev.
A
Page 1 of 8
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