MP252W datasheet, PDF - EEWORLD Datasheet

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MP252W: DescriptionBridge Rectifier Diode, 1 Phase, 25A, 200V V(RRM), Silicon, PLASTIC, MP-50W, 4 PIN; CategoryDiscrete semiconductor diode; File Size127KB，2 Pages; ManufacturerMicrosemi; Websitehttps://www.microsemi.com

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MP252W Overview

Bridge Rectifier Diode, 1 Phase, 25A, 200V V(RRM), Silicon, PLASTIC, MP-50W, 4 PIN

MP252W Parametric

Parameter Name	Attribute value
Maker	Microsemi
package instruction	S-PUFM-W4
Contacts	4
Reach Compliance Code	compliant
ECCN code	EAR99
Configuration	BRIDGE, 4 ELEMENTS
Diode component materials	SILICON
Diode type	BRIDGE RECTIFIER DIODE
Maximum forward voltage (VF)	1.1 V
JESD-30 code	S-PUFM-W4
JESD-609 code	e0
Maximum non-repetitive peak forward current	300 A
Number of components	4
Phase	1
Number of terminals	4
Maximum operating temperature	150 °C
Maximum output current	25 A
Package body material	PLASTIC/EPOXY
Package shape	SQUARE
Package form	FLANGE MOUNT
Certification status	Not Qualified
Maximum repetitive peak reverse voltage	200 V
surface mount	NO
Terminal surface	TIN LEAD
Terminal form	WIRE
Terminal location	UPPER

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21201 Itasca St.

Chatsworth, CA 91311

Phone: (818) 701-4933

Fax: (818) 701-4939

MP2505W

THRU

MP2510W

25 Amp Single Phase

Bridge Rectifier

50 to 1000 Volts

MP-50W

B

Features

•

Mounting Hole For #8 Screw

Plastic Case With Metal Bottom

Any Mounting Position

Surge Rating Of 300 Amps

Maximum Ratings

•

Operating Temperature: -55°C to +175°C

Storage Temperature: -55°C to +175°C

Maximum

Recurrent

Peak Reverse

Voltage

50V

100V

200V

400V

600V

800V

1000V

Maximum DC

Blocking

Voltage

50V

100V

200V

400V

600V

800V

1000V

G

Microsemi

Part Number

MP2505W

MP251W

MP252W

MP254W

MP256W

MP258W

MP2510W

Maximum

RMS Voltage

35V

70V

140V

280V

420V

560V

700V

C

E

D

AC

+

A

Electrical Characteristics @ 25°C Unless Otherwise Specified

Average Forward

Current

Peak Forward Surge

Current

Maximum Forward

Voltage Drop Per

Element

I

F(AV)

I

FSM

25.0A

300A

T

J

= 55°C

8.3ms, half sine

D

-

AC

H

V

F

1.1V

I

FM

= 12.5A per

element;

T

J

= 25°C*

DIM

A

B

C

D

E

G

H

INCHES

MIN

---

.692

.040

.188

.429

A

DIMENSIONS

MM

MIN

---

17.6

1.00

4.77

10.9

Maximum DC

Reverse Current At

I

R

10µA

T

J

= 25°C

Rated DC Blocking

0.5mA T

J

= 100°C

Voltage

*Pulse test: Pulse width 300

µsec,

Duty cycle 1%

MAX

1.140

.452

.750

.732

---

.468

MAX

29.00

11.50

19.10

18.6

---

11.9

NOTE

4PL/TYP

∅

MP252W Related Products

	MP252W	MP258W	MP256W
Description	Bridge Rectifier Diode, 1 Phase, 25A, 200V V(RRM), Silicon, PLASTIC, MP-50W, 4 PIN	Bridge Rectifier Diode, 1 Phase, 25A, 800V V(RRM), Silicon, PLASTIC, MP-50W, 4 PIN	Bridge Rectifier Diode, 1 Phase, 25A, 600V V(RRM), Silicon, PLASTIC, MP-50W, 4 PIN
Maker	Microsemi	Microsemi	Microsemi
package instruction	S-PUFM-W4	S-PUFM-W4	S-PUFM-W4
Contacts	4	4	4
Reach Compliance Code	compliant	compliant	compliant
Configuration	BRIDGE, 4 ELEMENTS	BRIDGE, 4 ELEMENTS	BRIDGE, 4 ELEMENTS
Diode component materials	SILICON	SILICON	SILICON
Diode type	BRIDGE RECTIFIER DIODE	BRIDGE RECTIFIER DIODE	BRIDGE RECTIFIER DIODE
Maximum forward voltage (VF)	1.1 V	1.1 V	1.1 V
JESD-30 code	S-PUFM-W4	S-PUFM-W4	S-PUFM-W4
JESD-609 code	e0	e0	e0
Maximum non-repetitive peak forward current	300 A	300 A	300 A
Number of components	4	4	4
Phase	1	1	1
Number of terminals	4	4	4
Maximum operating temperature	150 °C	150 °C	150 °C
Maximum output current	25 A	25 A	25 A
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	SQUARE	SQUARE	SQUARE
Package form	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT
Certification status	Not Qualified	Not Qualified	Not Qualified
Maximum repetitive peak reverse voltage	200 V	800 V	600 V
surface mount	NO	NO	NO
Terminal surface	TIN LEAD	TIN LEAD	TIN LEAD
Terminal form	WIRE	WIRE	WIRE
Terminal location	UPPER	UPPER	UPPER

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