ERA15-01 datasheet, PDF - EEWORLD Datasheet

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ERA15-01: DescriptionRectifier Diode, 1 Element, 1A, 100V V(RRM),; CategoryDiscrete semiconductor diode; File Size46KB，2 Pages; ManufacturerGalaxy Microelectronics; Environmental Compliance

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ERA15-01 Overview

Rectifier Diode, 1 Element, 1A, 100V V(RRM),

ERA15-01 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	Galaxy Microelectronics
Reach Compliance Code	unknown
Configuration	SINGLE
Diode type	RECTIFIER DIODE
Maximum forward voltage (VF)	1 V
Maximum non-repetitive peak forward current	40 A
Number of components	1
Maximum operating temperature	150 °C
Maximum output current	1 A
Maximum repetitive peak reverse voltage	100 V
surface mount	NO

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FEATURES

Low cost

GALAXY ELECTRICAL

ERA15-01 - - - ERA15-10

VOLTAGE RANGE: 50 --- 1000 V

CURRENT: 1.0 A

PLASTIC SILICON RECTIFIER

DO - 41

Diffused junction

Low leakage

Low forward voltage drop

High current capability

Easily cleaned with Freon,Alcohol,Isopropanol

and similar solvents

The plastic material carries U/L recognition 94V-0

MECHANICAL DATA

Case:JEDEC DO--41,molded plastic

Terminals: Axial lead ,solderable per

MIL- STD-202,Method 208

Polarity: Color band denotes cathode

Weight: 0.012ounces,0.34 grams

Mounting position: Any

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Ratings at 25

ambient temperature unless otherwise specified.

Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by 20%.

ERA15 ERA15 ERA15 ERA15 ERA15 ERA15

UNITS

-01

-02

-04

-06

-08

-10

Maximum recurrent peak reverse voltage

Maximum RMS voltage

Maximum DC blocking voltage

Maximum average forw ard rectified current

9.5mm lead length,

=75

RRM

RMS

F(AV)

100

200

140

200

400

280

400

1.0

600

420

600

800

560

800

1000

700

1000

Peak forw ard surge current

8.3ms single half-sine-w ave

superimposed on rated load

=125

FSM

40.0

Maximum instantaneous forw ard voltage

@ 1.0 A

Maximum reverse current

at rated DC blocking voltage

Typical junction capacitance

Typical thermal resistance

=25

=100

(Note1)

(Note2)

STG

1.0

5.0

50.0

- 55---- + 150

／Ｗ

Operating junction temperature range

Storage temperature range

NOTE: 1. Measured at 1.0MHz and applied rev erse v oltage of 4.0V DC.

2. Thermal resistance f rom junction to ambient.

www.galaxycn.com

Document Number 0260020

GALAXY ELECTRICAL

ERA15-01 Related Products

	ERA15-01	ERA15-06	ERA15-02	ERA15-04	ERA15-08	ERA15-10
Description	Rectifier Diode, 1 Element, 1A, 100V V(RRM),	Rectifier Diode, 1 Element, 1A, 600V V(RRM),	Rectifier Diode, 1 Element, 1A, 200V V(RRM),	Rectifier Diode, 1 Element, 1A, 400V V(RRM),	Rectifier Diode, 1 Element, 1A, 800V V(RRM),	Rectifier Diode, 1 Element, 1A, 1000V V(RRM),
Is it Rohs certified?	conform to	conform to	conform to	conform to	conform to	conform to
Maker	Galaxy Microelectronics	Galaxy Microelectronics	Galaxy Microelectronics	Galaxy Microelectronics	Galaxy Microelectronics	Galaxy Microelectronics
Reach Compliance Code	unknown	unknown	unknown	unknown	unknown	unknown
Configuration	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
Diode type	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE
Maximum forward voltage (VF)	1 V	1 V	1 V	1 V	1 V	1 V
Maximum non-repetitive peak forward current	40 A	40 A	40 A	40 A	40 A	40 A
Number of components	1	1	1	1	1	1
Maximum operating temperature	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C
Maximum output current	1 A	1 A	1 A	1 A	1 A	1 A
Maximum repetitive peak reverse voltage	100 V	600 V	200 V	400 V	800 V	1000 V
surface mount	NO	NO	NO	NO	NO	NO

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